SOPS-SOI technology and its application to the monolithic silicon schottky diode mixer

Abstract

In the first chapter, the fundamental research results on the porous silicon and its thermal oxidation was introduced. In the 2nd chapter, the oxidized porous silicon membrane was first introduced. The RF passive elements implemented on this membrane showed excellent performance due to the removal of lossy silicon substrate under the OPS layer. In chapter 3, the chip scale package method for an SAW filter was proposed on the OPS substrate using the thick ground metal wall formation. In chapter 4, Q-band MEMS floating ?patch antenna was implemented on the high resistivity silicon substrate using the surface micromachining technology of thick photoresist and metal plating.In 5th chapter, the single-balanced Schottky diode mixer was first implemented on the SOPS-SOI substrate based on the n-diffusion well. This n-diffusion well was used as an n-Schottky contact with Pt/Ti/Au. Implemented Schottky contact diode showed good isolation with the substrate and this was ensured using the equivalent pi-model.