DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Lim, Koeng-Su | - |
dc.contributor.advisor | 임굉수 | - |
dc.contributor.author | Ahn, Jun-Yong | - |
dc.contributor.author | 안준용 | - |
dc.date.accessioned | 2011-12-14 | - |
dc.date.available | 2011-12-14 | - |
dc.date.issued | 2003 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=231129&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/35179 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 전기및전자공학전공, 2003.8, [ [iv], 98 p. ] | - |
dc.description.abstract | In this thesis, the degradation and the thermal annealing behaviors of amorphous silicon (a-Si:H)-based solar cells incorporating stable $H_2-diluted$ i-a-Si:H films as well as the film characteristics and light-soaking behaviors of $H_2-diluted$ i-a-Si:H deposited at several hydrogen dilution ratios $(R = [H_2]/[SiH_4])$, were investigated. The stability of the protocrystalline silicon (pc-Si:H) and the newly observed instability of the silicon films deposited at the onset of the microcrystalline regime were reported, and a reason for the instability was suggested. Firstly, the characteristics and the light-soaking behaviors of $H_2-diluted$ a-Si:H films prepared at several R values, were investigated. From the investigation, just before the onset of the microcrystalline regime, we found a moderate R = 1.5 where the very stable pc-Si:H was formed. However, for the films deposited at the onset of the microcrystalline regime (R = 2, 2.5), the films were less stable compared with the pc-Si:H (R = 1.5) in spite of the 3 facts: the microcrystallized films have i) more blue-shifted amorphous TO phonon bands in Raman spectrum; ii) microcrystallites; and iii) lower broadening parameters (C), which were suggested as the empirical evidences for the stability of intermediate material between a-Si:H and μc-Si:H. In contrast with these 3 facts, the amplitude parameter A was strongly correlated with the stability of all the H2-diluted silicon films. The film with the highest A, considered as the most dense film, was deposited at R = 1.5, namely the protocrystalline condition, and it exhibited the highest stability. At the onset of the microcrystalline regime where the parameter A decreased, the clustered Si-H bonds were observed. The fact that such bonds enhanced the light-induced degradation supported the instability of the onset regime and the correlation between the parameter A and the stability of the films. Also, the light-soaking behaviors and the thermal annealing k... | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | low degradation | - |
dc.subject | protocrystalline silicon | - |
dc.subject | amorphous silicon based-solar cell | - |
dc.subject | 비정질 실리콘 태양전지 | - |
dc.subject | 저열화 | - |
dc.subject | 프로토크리스탈 실리콘 | - |
dc.title | Characterization of stable protocrystallin silicon and its application to light-absorbing layers of amorphous silicon-based solar cells | - |
dc.title.alternative | 안정한 프로토크리스털 실리콘의 특성분석과 이 물질의 비정질 실리콘 태양전지 빛 흡수층으로의 응용 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 231129/325007 | - |
dc.description.department | 한국과학기술원 : 전기및전자공학전공, | - |
dc.identifier.uid | 000985208 | - |
dc.contributor.localauthor | Lim, Koeng-Su | - |
dc.contributor.localauthor | 임굉수 | - |
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