DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Han, Chul-Hi | - |
dc.contributor.advisor | 한철희 | - |
dc.contributor.author | Lee, Nae-In | - |
dc.contributor.author | 이내인 | - |
dc.date.accessioned | 2011-12-14 | - |
dc.date.available | 2011-12-14 | - |
dc.date.issued | 1999 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=156185&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/35128 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 전기및전자공학과, 1999.8, [ iv, 130 p. ] | - |
dc.description.abstract | Electron cyclotron resonance (ECR) nitrous oxide ($N_2O$)-plasma thin oxide is investigated fot a tunnel oxide and interpoly dielectric (IPD) of polycrystalline silicon thin-film transistor EEPROMs (poly-Si TFT EEPROMs), and high-performance poly-Si TFT EEPROMs with the ECR $N_2O$-plasma oxide is demonstrated. ECR $N_2O$-plasma oxide has self-limited growth characteristics due to nitrogen pile-up of 4~5 a.t. % at oxide/poly-Si interface and strong bonds of Si≡N are formed even at low temperature. Furthermore, ECR $N_2O$-plasma oxide exhibits lower leakage current, higher breakdown field of 10MV/cm, larger barrier height of 2.72eV, which is much better electrical properties than oxide thermally grown on poly-Si film. On the other hand, poly-Si film crystallized by excimer laser annealing (ELA) has excellent crystallinity and larger grain size compared to solid-phase crystallized (SPC) poly-Si films. Therefore, ECR $N_2O$-plasma oxide grown on ELA poly-Si film has slightly higher breakdown field, much smaller gate voltage shifts, and higher charge-to- breakdown (Qbd) up to 4C/㎠ than that on SPC poly-Si film. $POCl_3$ doped poly-Si film has larger surface roughness than in-situ doped poly-Si film and thus it seriously degrades the reliability of polyoxide on $POCl_3$ doped poly-Si film. However, ECR $N_2O$-plasma polyoxide on in-situ doped poly-Si film has lower leakage current and higher breakdown field, furthermore, lower electron trapping rate and larger Qbd up to 10 C/㎠, which is comparable to the electrical properties of ONO IPD. Especially, although polysilicon films are heavily doped with phosphorus of $1×10^{22}cm^{-3}$, ECR $N_2O$-plasma polyoxide exhibits significantly high breakdown field of 10MV/cm and low electron trapping rate of 0.5V, which are independent of phosphorus concentration. This is mainly attributed to the smooth polyoxide/poly-Si interface, low phosphorus concentration, and nitrogen-rich layer with strong Si-N bonds at the polyoxide/po... | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | EEPROM | - |
dc.subject | 플라즈마 산화막 | - |
dc.subject | 저온 | - |
dc.subject | 다결정 실리콘 | - |
dc.subject | 박막트랜지스 | - |
dc.subject | ECR | - |
dc.subject | TFT | - |
dc.subject | Plasma oxide | - |
dc.subject | Low temperature Polysilicon | - |
dc.title | Polysilicon thin film transistor EEPROMs using ECR $N_2O$-plasma thin oxide as tunnel oxide and interpoly dielectric | - |
dc.title.alternative | 얇은 ECR $N_2O$-플라즈마 산화막을 tunnel oxide 및 interpoly dielectric으로 사용한 다결정 실리콘 박막 트랜지스터 EEPROMs에 대한 연구 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 156185/325007 | - |
dc.description.department | 한국과학기술원 : 전기및전자공학과, | - |
dc.identifier.uid | 000955255 | - |
dc.contributor.localauthor | Han, Chul-Hi | - |
dc.contributor.localauthor | 한철희 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.