Spintronic Artificial Synapses Using Voltage-Controlled Multilevel Magnetic States

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Neuromorphic computing offers energy-efficient computations for large-scale data processing compared to conventional von Neumann computing. The artificial synapse, a key element for learning and memory operations in neuromorphic computing, requires multi-state characteristics and the capability to change and store its states. The implementation of hardware-based artificial synapses using nonvolatile memory provides significant advantages in terms of energy consumption and circuit area compared to their currently employed CMOS-based counterparts. In this regard, spintronic devices have emerged as a promising candidate due to their desirable properties for artificial synapses, including multilevel formability, non-volatility, and outstanding writing performance. In this study, spintronic artificial synapses utilizing voltage-controlled multilevel magnetic states and energy- and area-efficient artificial neural network architectures associated with them are demonstrated. The multilevel states are created by gradually modulating the magnetic easy-axis orientation from perpendicular to in-plane and vice versa, which is achieved either by sequentially applying gate voltage pulses or by adjusting the pulse width of the gate voltage. Based on these spintronic artificial synapses, convolutional neural network (CNN) and spiking neural network (SNN) architectures are constructed, demonstrating high recognition accuracy for the MNIST dataset with improved energy efficiency and a reduced circuit area.,Multilevel magnetic states are generated by gradually modulating the magnetic easy-axis orientation through the application of gate voltage pulses, enabling the creation of spintronic artificial synapses. Convolutional neural network and spiking neural network architectures leveraging these spintronic artificial synapses demonstrate high recognition accuracy for the MNIST dataset, along with improved energy efficiency and reduced circuit area. image,
Publisher
WILEY
Issue Date
2024-08
Language
English
Article Type
Article
Citation

ADVANCED ELECTRONIC MATERIALS, v.10, no.8

ISSN
2199-160X
DOI
10.1002/aelm.202300889
URI
http://hdl.handle.net/10203/322905
Appears in Collection
MS-Journal Papers(저널논문)
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