Hole-Carrier-Dominant Transport in 2D Single-Crystal Copper
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang, Heejun | ko |
| dc.date.accessioned | 2024-09-08T09:00:09Z | - |
| dc.date.available | 2024-09-08T09:00:09Z | - |
| dc.date.created | 2024-09-08 | - |
| dc.date.issued | 2024-06 | - |
| dc.identifier.citation | Advanced Materials | - |
| dc.identifier.issn | 0935-9648 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/322827 | - |
| dc.language | English | - |
| dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
| dc.title | Hole-Carrier-Dominant Transport in 2D Single-Crystal Copper | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.publicationname | Advanced Materials | - |
| dc.contributor.localauthor | Yang, Heejun | - |
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