Interface Engineering of 2D Materials for Highly Performing Electronic and Energy Devices

Abstract

The development of next-generation electronic and energy devices has required unprecedented active channels based on low-dimensional materials. One promising strategy is to use various interfaces in polymorphic 2D materials, which offer lateral and vertical as well as lattice and phase heterostructures with numerous geometries. The research direction has matured in terms of both materials science (i.e., synthesis) and physics (i.e., characterizations), and technological innovations for devices have been demonstrated through extensive studies of 2D materials. Here, we spotlight the critical results and promising approaches toward seamless atomic interfaces of 2D materials and their application in electronic and energy devices with 2D materials-based interfaces. These include homo- and heterophase-based devices such as memristors, resonant tunneling transistors, and electrochemical cells. As the growth process and quality of large-area 2D materials have rapidly improved, our discussion of the current technological progress with 2D materials, their interfaces, and related physics provides timely information to researchers in this field.