DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Taeseung | ko |
dc.contributor.author | Nam, Sooji | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.date.accessioned | 2024-09-05T03:00:13Z | - |
dc.date.available | 2024-09-05T03:00:13Z | - |
dc.date.created | 2024-08-29 | - |
dc.date.issued | 2024-05 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.5, pp.3009 - 3014 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/322627 | - |
dc.description.abstract | The advancement of oxide thin-film transistors (TFTs) with high-performance is crucial for high-resolution, high-framerate displays as they serve as switching and driving elements. To ensure high mobility characteristics and withstand relatively high supply voltage (5 V), a TFT panel must have a high-3. gate dielectric (DE) with comparatively thick thickness and good interfacial quality. Maintaining a high-4. gate insulator in a moderately thick regime and preventing charge-trapping from deteriorating electrical properties are still difficult tasks. In this study, we employed an oxide TFT with a morphotropic phase boundary (MPB) Hf-Zr-O (HZO) film as a high-5. gate insulator. MPB is a combination of two crystalline phases between the orthorhombic phase of the ferroelectric (FE) phase and the tetragonal phase of the anti-FE (AFE) phase, which exhibits the maximum DE constant (6.) of the HZO film. A 30 nm-thick film of MPB HZO (Hf:Zr = 1:5) was used as the high-gate insulator in TFT. Also, by inserting 1 nm-thick AlO between the oxide channel and the HZO gate insulator, we mitigated the impact of charge trapping on the electrical properties. Ultimately, we used a pulse with a rise duration of 50 ns for ultrafast I-D-V-G to estimate intrinsic mobility. The intrinsic mobility of the MPB HZO + AlO device was found to be 20.9 cm (2) /V center dot s, which is equivalent to the mobility of a SiO2 gate insulator in the same device. The findings of this research are noteworthy as we assessed the electrical characteristics of oxide TFT using MPB HZO as a gate insulator for the first time. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Ultrafast (50 ns) ID-VGAnalysis on Oxide Thin-Film Transistors With Morphotropic Phase Boundary State High-κ Gate Insulator | - |
dc.type | Article | - |
dc.identifier.wosid | 001194009700001 | - |
dc.identifier.scopusid | 2-s2.0-85189170407 | - |
dc.type.rims | ART | - |
dc.citation.volume | 71 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 3009 | - |
dc.citation.endingpage | 3014 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2024.3376317 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Nam, Sooji | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Logic gates | - |
dc.subject.keywordAuthor | Insulators | - |
dc.subject.keywordAuthor | Thin film transistors | - |
dc.subject.keywordAuthor | Annealing | - |
dc.subject.keywordAuthor | Time measurement | - |
dc.subject.keywordAuthor | Electric variables measurement | - |
dc.subject.keywordAuthor | Electric variables | - |
dc.subject.keywordAuthor | Hf-Zr-O (HZO) | - |
dc.subject.keywordAuthor | defects | - |
dc.subject.keywordAuthor | fast I-D-V-G | - |
dc.subject.keywordAuthor | high-TEXPRESERVE17 gate insulator | - |
dc.subject.keywordAuthor | mobility | - |
dc.subject.keywordAuthor | morphotropic phase boundary (MPB) | - |
dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | FERROELECTRICITY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | SIO2 | - |
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