DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Ketong | ko |
dc.contributor.author | Jung, Minhyun | ko |
dc.contributor.author | Jung, Taeseung | ko |
dc.contributor.author | Yoon, Jae Seok | ko |
dc.contributor.author | Hwang, Junghyeon | ko |
dc.contributor.author | Shin, Hunbeom | ko |
dc.contributor.author | Kim, Seungyeob | ko |
dc.contributor.author | Kim, Chaeheon | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.date.accessioned | 2024-09-03T06:00:09Z | - |
dc.date.available | 2024-09-03T06:00:09Z | - |
dc.date.created | 2024-08-29 | - |
dc.date.issued | 2024-06 | - |
dc.identifier.citation | ACS APPLIED ELECTRONIC MATERIALS, v.6, no.7, pp.5067 - 5076 | - |
dc.identifier.uri | http://hdl.handle.net/10203/322556 | - |
dc.description.abstract | Hafnia ferroelectrics are gaining significance in nonvolatile memory, logic devices, and neuromorphic computing because of their rapid switching speed, exceptional reliability, and low-voltage operations. In addition, it demonstrates exceptional process compatibility with advanced thin film techniques such as atomic layer deposition (ALD). Conventical radio frequency (RF) plasma-enhanced (PE) ALD offers various advantages including enhanced reaction rates, improved film characteristics, and a lower process temperature. However, the inevitable plasma damages and interfacial defects that occur as a result of the RF PE-ALD process have a major impact on the polarization hysteresis features of hafnia ferroelectrics. In our study, we fabricated a Hf-0.5 Zr0.5O2 (HZO) film utilizing a very high frequency (VHF) (similar to 100 MHz) PEALD. This approach demonstrated greater effectiveness in radical reactions and efficiently mitigated plasma-induced damage in the HZO film. The utilization of high-frequency plasma enhances stability and exhibits excellent ferroelectric characteristics. Specifically, it led to an increase in the interfacial capacitance, a decrease in the wake-up effect, and a reduction in the proportion of suboxide in HZO films. Our observations revealed exceptional switching speed (60 ns) and outstanding reliability (10(10) cycles) along with a retention rate of 94% over a span of 10 years at a temperature of 85 degrees C. The research demonstrates that VHF PE-ALD is a viable method for creating hafnia thin films with reduced defects at the interface. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Unlocking the Potential of Hafnia Ferroelectrics: Achieving High Reliability via Plasma Frequency Modulation in Very High-Frequency Plasma-Enhanced Atomic Layer Deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 001253348100001 | - |
dc.identifier.scopusid | 2-s2.0-85196938914 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 5067 | - |
dc.citation.endingpage | 5076 | - |
dc.citation.publicationname | ACS APPLIED ELECTRONIC MATERIALS | - |
dc.identifier.doi | 10.1021/acsaelm.4c00630 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Yoon, Jae Seok | - |
dc.contributor.nonIdAuthor | Hwang, Junghyeon | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Hf0.5Zr0.5O2 | - |
dc.subject.keywordAuthor | veryhigh frequency plasma-enhanced atomic layer deposition | - |
dc.subject.keywordAuthor | interfaciallayer | - |
dc.subject.keywordAuthor | plasma damage | - |
dc.subject.keywordAuthor | ferroelectrics | - |
dc.subject.keywordPlus | HF0.5ZR0.5O2 THIN-FILMS | - |
dc.subject.keywordPlus | POOLE-FRENKEL | - |
dc.subject.keywordPlus | DAMAGE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | ENDURANCE | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | VHF | - |
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