DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Seongjin | ko |
dc.contributor.author | Kim, Kang | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.date.accessioned | 2024-09-02T11:00:07Z | - |
dc.date.available | 2024-09-02T11:00:07Z | - |
dc.date.created | 2024-08-29 | - |
dc.date.issued | 2024-05 | - |
dc.identifier.citation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.221, no.9 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | http://hdl.handle.net/10203/322541 | - |
dc.description.abstract | Hydrogen plays a crucial role in controlling the electrical characteristics of oxide thin-film transistors (TFTs). The conductivity of the semiconductor can be modulated by controlling the amount of hydrogen in the active layer. In this study, a thermal annealing of the sample in an inverted orientation (referred to as "upside-down annealing") is introduced. The impact of this approach on the hydrogen content within the In2O3 active layer is examined through the lens of a hydrogen diffusion model. By time-of-flight secondary ion mass spectrometry analysis, a hydrogen diffusion model for the TFT is established, and it is demonstrated that upside-down annealing is an effective method for preventing hydrogen depletion caused by out-diffusion. A bottom-gate bottom-contact TFT is fabricated to analyze electrical characteristics. By employing different post-thermal annealing methods on the device, it is discovered that the upside-down annealing enhances the device's performance significantly up to mobility of 22.3 cm2 V-1 s-1, which surpasses more than twice the mobility achieved with the traditionally oriented, "straight" annealed TFT. In this study, a thermal annealing method of oxide thin-film transistors in an inverted orientation, called "upside-down annealing," is introduced. Upside-down annealing prevents hydrogen out-diffusion from the In2O3 active layer and enhances mobility. The hydrogen content in the In2O3 active layer is examined through the lens of a hydrogen-diffusion model.image (c) 2024 WILEY-VCH GmbH | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Upside-Down Annealing of Oxide Thin-Film Transistors and its Analysis Using Hydrogen-Diffusion Model | - |
dc.type | Article | - |
dc.identifier.wosid | 001179305200001 | - |
dc.identifier.scopusid | 2-s2.0-85186613443 | - |
dc.type.rims | ART | - |
dc.citation.volume | 221 | - |
dc.citation.issue | 9 | - |
dc.citation.publicationname | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.identifier.doi | 10.1002/pssa.202300904 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Park, Seongjin | - |
dc.contributor.nonIdAuthor | Kim, Kang | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | hydrogen diffusions | - |
dc.subject.keywordAuthor | interface trap sites | - |
dc.subject.keywordAuthor | oxide thin film transistors | - |
dc.subject.keywordAuthor | secondary ion mass spectrometries, vacuum annealings | - |
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