Pb-free colloidal quantum dot layers in thin-film photovoltaic architectures

Abstract

In the current and future trends where increasing the share of renewable energy in power generation is imperative, solar energy holds the largest proportion and its generation capacity is on the rise. In this context, photovoltaics (PV) have been researched based on various materials and functionalities. Recently, following silicon and compound thin-film PVs, solar cells approaching next-generation commercialization are being classified and studied as next-generation PVs. Among them, colloidal quantum dots (CQD), based on quantum confinement effects, can perform various roles in PVs, such as the absorption layer and charge transport layer, with selective light absorption and energy level tailoring characteristics. In particular, infrared absorption makes them promising candidates for next-generation tandem PVs. However, research to date has been hindered by leadbased CQD studies. In this study, we fabricated a device utilizing the functional properties of lead-free CQD film in PV, considering their optical and electrical characteristics. We aim to analyze and improve carrier movement in a new device structure. Through these studies, we expect to broaden the understanding of designing and operating devices with non-lead colloidal thin films for future next-generation solar cells