(A) study of single transistor oscillator on a bulk silicon wafer

Abstract

This study explores the oscillation behavior manifested in a transistor structure with a current-input voltage-output configuration, constructed on a bulk silicon wafer. While its operational principle parallels that of a silicon-on-insulator (SOI) substrate, this study distinguishes itself by implementing oscillation operations through a single transistor latch (STL) on a bulk silicon substrate instead of an SOI substrate. More precisely, the research posits the existence of an electrical floating body (e-floating body) within a MOSFET fabricated on a bulk substrate. This e-floating body is functionally akin to the physical floating body that existed in MOSFETs on a SOI wafer. The study further examines how this configuration influences the latch and oscillation characteristics, revealing distinct tendencies in these behaviors.