학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2024.2,[iv, 48 p. :]
transition metal dichalcogenides▼atungsten diselenide ($WSe_2$)▼atransistor▼aFermi level depinning▼aSchottky barrier height▼ametal-interlayer-semiconductor contact; 전이금속 칼코겐 화합물▼a이셀레늄화텅스텐 ($WSe_2$)▼a트랜지스터▼a페르미 레벨 디피닝▼a쇼트키 장벽 높이▼a금속-중간층-반도체 접촉
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