DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 신민철 | - |
dc.contributor.author | Jang, Jeonghwan | - |
dc.contributor.author | 장정환 | - |
dc.date.accessioned | 2024-07-30T19:31:26Z | - |
dc.date.available | 2024-07-30T19:31:26Z | - |
dc.date.issued | 2024 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=1096802&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/321584 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2024.2,[vii, 55 p. :] | - |
dc.description.abstract | Resistive Random Access Memory (RRAM) has emerged as a promising candidate for next-generation storage class memory, primarily owing to its simple structure, cost-effectiveness in the manufacturing process, and high endurance. Despite these advantages, the commercialization of RRAM has been hindered by cell-to-cell variance. Various solutions have been proposed, with methods concentrating electric fields through electrode engineering, such as protruding electrodes, showing promising outcomes. However, existing studies have not fully explored the extent of changes in switching characteristics or the variations in these characteristics based on the specifications of the protruding electrode when applied. This thesis investigated the impact of a protruding top electrode on RRAM, analyzing the enhancement in switching performance with respect to the depth and slope of the protruding electrode through multi-physical simulation. The outcomes provide some simple design rules for applying protruding electrodes. Furthermore, we analyzed the variation in the effect of protruding electrodes concerning different switching layer materials and confirmed the potential of utilizing surface roughness to improve the switching performance of RRAM. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | 저항 메모리▼a산화물 기반 저항 메모리▼a돌출 전극▼a표면 거칠기▼a다물리 시뮬레이션 | - |
dc.subject | Resistive random access memory▼aOxRAM▼aProtruding electrode▼aSurface roughness▼aMulti-physics simulation | - |
dc.title | Improving switching performance of RRAM through protruding top electrode and utilizing surface roughness: multi-physics simulations | - |
dc.title.alternative | 상부 돌출 전극과 표면 거칠기를 이용한 저항 메모리의 스위칭 성능 향상: 다물리 시뮬레이션 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :전기및전자공학부, | - |
dc.contributor.alternativeauthor | Shin, Mincheol | - |
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