High viscosity and low dielectric loss vinyl-phenyl siloxane material for fabrication of microwave electronic build-up film

Abstract

Recently, as internet usage and traffic volume continuously increase, there is a need for wireless telecommunication technology capable of rapidly processing it. Accordingly, high-frequency based 5G telecommunication technology, with its ultra-high speed, ultra-low latency, and ultra-connectivity, is drawing attention as a major technology for the fourth industrial revolution, represented by augmented reality (AR), virtual reality (VR) and autonomous vehicles. In addition to wireless telecommunication, high performance computing (HPC) for solving complex problems is also attracted a lot of attention. Similar to 5G telecommunication, this device also uses high-frequency based high-memory data bandwidth signal transmission. However, in such high-frequency wave range, dielectric loss becomes larger so that increased total transmission loss may lead to a degradation of performance. In order to prevent this degradation of performance, low dielectric loss materials should be applied as dielectric layers in microwave electronic devices by reducing dielectric loss. In this research, a novel vinyl-phenyl siloxane material and quartz fabric reinforced vinyl-phenyl siloxane film were fabricated with low dielectric constant and dissipation factor values in the GHz frequency wave range. High viscosity siloxane was mixed with a solvent and dried to create a non-sticky film at room temperature, providing a build-up film which is favorable for making high density interconnect (HDI) circuit boards. In addition to dielectric properties, water absorption property, mechanical and thermomechanical properties were measured to evaluate the actual applicability of the material.