DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Kim, Kyung Min | - |
dc.contributor.author | 김명은 | - |
dc.contributor.author | Kim, Myeongeun | - |
dc.date.accessioned | 2024-07-30T19:31:14Z | - |
dc.date.available | 2024-07-30T19:31:14Z | - |
dc.date.issued | 2024 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=1096744&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/321526 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 신소재공학과, 2024.2,[v, 48 p. :] | - |
dc.description.abstract | As the demand of emerging industry for mass data processing such as high-performance computing (HPC) and generative artificial intelligence (AI) rises, high-density interconnect technology becomes even more crucial. However, conventional solder bonding technology can’t be applied due to interfacial reliability issues. Through solderless Cu-Cu bonding, stacking highly integrated devices with a fine pitch of several um would be possible. For the low temperature Cu-Cu bonding, the passivation layer is required to prevent surface oxidation during the bonding process. Here, the Ru passivation layer is proposed for the achievement of metal capping passivation technologies. The feasibility of the Ru passivation layer is proved by verifying the passivation effect of Ru for Cu surfaces and the diffusion of Cu through the Ru layer in thermal conditions. The bonding mechanism of the Ru-passivated Cu after thermal compression bonding (TCB) process is discussed through analysis of the bonding interface and fracture surface. Furthermore, we optimized the proper thickness of the Ru layer for highly reliable bonding and evaluated the bonding properties at various temperatures. Conclusively excellent bonding properties could be obtained even at low bonding temperature of 250 ℃, and the electrical reliability under the thermal cycling test (TCT) is measured. These results can confirm that the Ru passivation layer is a promising candidate for low-temperature Cu-Cu bonding technology. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | 구리-구리 접합▼a3D-IC▼a금속 보호층▼a루테늄▼a접합 메커니즘 | - |
dc.subject | Cu-Cu bonding▼a3D-IC▼aMetal passivation▼aRuthenium▼aBonding mechanism | - |
dc.title | Study on ruthenium passivation for reliable cu-cu bonding with a tolerance to surface morphology | - |
dc.title.alternative | 표면 형상에 대한 내구성을 갖는 신뢰성 있는 구리-구리 접합을 위한 루테늄 패시베이션에 관한 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :신소재공학과, | - |
dc.contributor.alternativeauthor | 김경민 | - |
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