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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Journal Papers(저널논문)

SELECTIVE AREA GROWTH OF GAAS WITH SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES USING PULSED-MODE OPERATION OF MOCVD

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dc.contributor.authorHong, Chang-Heeko
dc.contributor.authorKim, Chang-Taeko
dc.contributor.authorKwon, Young Seko
dc.date.accessioned2008-02-27T02:47:23Z-
dc.date.available2008-02-27T02:47:23Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1990-10-
dc.identifier.citationJOURNAL OF ELECTRONIC MATERIALS, v.19, no.10, pp.1141 - 1144-
dc.identifier.issn0361-5235-
dc.identifier.urihttp://hdl.handle.net/10203/3211-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherSpringer-
dc.titleSELECTIVE AREA GROWTH OF GAAS WITH SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES USING PULSED-MODE OPERATION OF MOCVD-
dc.typeArticle-
dc.identifier.wosidA1990EG71000023-
dc.identifier.scopusid2-s2.0-0025505109-
dc.type.rimsART-
dc.citation.volume19-
dc.citation.issue10-
dc.citation.beginningpage1141-
dc.citation.endingpage1144-
dc.citation.publicationnameJOURNAL OF ELECTRONIC MATERIALS-
dc.identifier.doi10.1007/BF02651995-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKwon, Young Se-
dc.contributor.nonIdAuthorHong, Chang-Hee-
dc.contributor.nonIdAuthorKim, Chang-Tae-
dc.type.journalArticleArticle; Proceedings Paper-
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EE-Journal Papers(저널논문)
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