DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Taeho | ko |
dc.contributor.author | Park, Joonho | ko |
dc.contributor.author | Jung, Hanggyo | ko |
dc.contributor.author | Choi, Haeju | ko |
dc.contributor.author | Lee, Sang‐Min | ko |
dc.contributor.author | Lee, Nayeong | ko |
dc.contributor.author | Lee, Ryong Gyu | ko |
dc.contributor.author | Kim, Gahye | ko |
dc.contributor.author | Kim, Seung‐Hwan | ko |
dc.contributor.author | Kim, Hyung‐jun | ko |
dc.contributor.author | Yang, Cheol‐Woong | ko |
dc.contributor.author | Jeon, Jongwook | ko |
dc.contributor.author | Kim, Yong‐Hoon | ko |
dc.contributor.author | Lee, Sungjoo | ko |
dc.date.accessioned | 2024-07-29T08:00:05Z | - |
dc.date.available | 2024-07-29T08:00:05Z | - |
dc.date.created | 2024-07-25 | - |
dc.date.issued | 2024-06 | - |
dc.identifier.citation | ADVANCED MATERIALS, v.36, no.26 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | http://hdl.handle.net/10203/321163 | - |
dc.description.abstract | Herein, a high-quality gate stack (native HfO2 formed on 2D HfSe2) fabricated via plasma oxidation is reported, realizing an atomically sharp interface with a suppressed interface trap density (D-it approximate to 5 x 10(10) cm(-2) eV(-1)). The chemically converted HfO2 exhibits dielectric constant, kappa approximate to 23, resulting in low gate leakage current (approximate to 10(-3) A cm(-2)) at equivalent oxide thickness approximate to 0.5 nm. Density functional calculations indicate that the atomistic mechanism for achieving a high-quality interface is the possibility of O atoms replacing the Se atoms of the interfacial HfSe2 layer without a substitution energy barrier, allowing layer-by-layer oxidation to proceed. The field-effect-transistor-fabricated HfO2/HfSe2 gate stack demonstrates an almost ideal subthreshold slope (SS) of approximate to 61 mV dec(-1) (over four orders of I-DS) at room temperature (300 K), along with a high I-on/I-off ratio of approximate to 10(8) and a small hysteresis of approximate to 10 mV. Furthermore, by utilizing a device architecture with separately controlled HfO2/HfSe2 gate stack and channel structures, an impact ionization field-effect transistor is fabricated that exhibits n-type steep-switching characteristics with a SS value of 3.43 mV dec(-1) at room temperature, overcoming the Boltzmann limit. These results provide a significant step toward the realization of post-Si semiconducting devices for future energy-efficient data-centric computing electronics. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | High-κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low-Power Steep-Switching Computing Devices | - |
dc.type | Article | - |
dc.identifier.wosid | 001198141400001 | - |
dc.identifier.scopusid | 2-s2.0-85189436232 | - |
dc.type.rims | ART | - |
dc.citation.volume | 36 | - |
dc.citation.issue | 26 | - |
dc.citation.publicationname | ADVANCED MATERIALS | - |
dc.identifier.doi | 10.1002/adma.202312747 | - |
dc.contributor.localauthor | Kim, Yong‐Hoon | - |
dc.contributor.nonIdAuthor | Kang, Taeho | - |
dc.contributor.nonIdAuthor | Park, Joonho | - |
dc.contributor.nonIdAuthor | Jung, Hanggyo | - |
dc.contributor.nonIdAuthor | Choi, Haeju | - |
dc.contributor.nonIdAuthor | Lee, Sang‐Min | - |
dc.contributor.nonIdAuthor | Lee, Nayeong | - |
dc.contributor.nonIdAuthor | Kim, Gahye | - |
dc.contributor.nonIdAuthor | Kim, Seung‐Hwan | - |
dc.contributor.nonIdAuthor | Kim, Hyung‐jun | - |
dc.contributor.nonIdAuthor | Yang, Cheol‐Woong | - |
dc.contributor.nonIdAuthor | Jeon, Jongwook | - |
dc.contributor.nonIdAuthor | Lee, Sungjoo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | atomically sharp interface | - |
dc.subject.keywordAuthor | high-kappa gate stack | - |
dc.subject.keywordAuthor | native oxide | - |
dc.subject.keywordAuthor | steep-switching computing | - |
dc.subject.keywordAuthor | van der waals material | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | HEXAGONAL BORON-NITRIDE | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | IMPACT-IONIZATION | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | AL2O3 | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | HFO2 | - |
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