DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 박상희 | - |
dc.contributor.author | Lee, Seung Hee | - |
dc.contributor.author | 이승희 | - |
dc.date.accessioned | 2024-07-26T19:31:28Z | - |
dc.date.available | 2024-07-26T19:31:28Z | - |
dc.date.issued | 2021 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=1051998&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/321114 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 신소재공학과, 2021.8,[viii, 84 p. :] | - |
dc.description.abstract | Oxide semiconductors have been actively studied owing to their remarkable characteristics such as high mobility, low leakage current, large-area uniformity, and transparency for active matrix flat-panel displays, power devices, sensing devices and computing devices. Atomic layer deposition (ALD) has attracted much attention, particularly for applications in nanoelectronics because of its atomic-level controllability and high-quality product. This study deal with indium-based oxide semiconductor process engineering using atomic layer deposition and application to high resolution display which is 3-D structure thin film transistor. Firstly, ALD processing design was conducted the plasma-enhanced atomic layer deposition (PEALD) process was controlled to deposit a homogeneous indium aluminum oxide semiconductor film. Trimethylaluminum (TMA) and dimethyl aluminum isopropoxide (DMAI) were the two precursors used to form aluminum oxide. The TMA- and DMAI-based indium aluminum oxide films exhibited quite different composition characteristics. Thus, the surface reactions between indium and aluminum precursors during the multi-step (A→B→O) PEALD process were scrutinized by density functional theory (DFT) simulation. DMAI was utilized as the precursor of AlOx in the PEALD process, a carrier suppressor of an indium oxide (In$_2$O$_3$) semiconductor, to fabricate indium aluminum oxide thin-film transistors. The demand for ultra-high resolution displays for next-generation VR/AR display applications is increasing. Accordingly, scale-down of transistors is in progress, and research on vertical transistors and channel layers deposited by atomic layer deposition is required. This study presents a vertical channel oxide thin film transistor fabricated by PEALD with line width of 1 um and showing stable electrical properties under bending radius of 0.5mm without degradation. Our device serves as a suitable candidate for a transistor in next generation 2000 ppi foldable and rollable display. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | 원자층증착법▼a산화물 반도체▼a인듐-알루미늄-옥사이드▼a수직채널트랜지스터▼a유연소자 | - |
dc.subject | Atomic layer deposition▼aOxide semiconductor▼aIndium-Aluminum-Oxide▼aVertical channel thin film transistor▼aFlexible device | - |
dc.title | (A) study on process engineering of indium-based oxide semiconductor using atomic layer deposition and its application to high resolution flexible display | - |
dc.title.alternative | 원자층 증착법을 이용한 인듐 기반 산화물 반도체 공정 및 고해상도 유연 디스플레이를 위한 응용 연구 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :신소재공학과, | - |
dc.contributor.alternativeauthor | Park, Sang-Hee | - |
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