Investigating the effects of surface plasmon on capacitance of metal-semiconductor interfaces

Abstract

Capacitors are promising energy storage devices with high power and energy densities due to their rapid discharge rates. To enhance our comprehension of the capacitor interface and improve its efficiency, we conducted a study on a metal-semiconductor capacitor that had not been explored previously. In this study, we aimed to investigate a metal-semiconductor capacitor that had not been studied before, in order to increase our understanding of their interface. Meanwhile, there are ongoing studies on hot electron-based photocatalysts and photoelectric conversion engineering utilizing the surface plasmon effect. As a response to this trend, we aimed to improve the capacitance at the metal-semiconductor interface through the localized surface plasmon resonance effect (LSPR). Capacitance measurements were performed under various conditions, including film structures, light wavelengths and power, and DC bias values. The results show that LSPR can enhance the accumulation and confinement of electrons in the TiO2 layer, leading to an increase in the real capacitance value. The imaginary capacitance was also found to be affected by the DC bias and the diffusion flow of electrons. The film structure and the wavelength and power of the light were found to have significant effects on the capacitance behavior of the system. The device surface structure and the wavelength and intensity of the light also have a significant effect on the capacitance of the diode. Overall, our study provides insight into the potential applications of plasmons in improving the performance of electronic devices. Our research is fundamental in this field and may have practical implications for designing high-performance capacitors.