Spacer engineering of quasi-2D perovskites for high-efficiency light-emitting diodes고효율 준 이차원 페로브스카이트 발광다이오드를 위한 분리자 연구

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dc.contributor.advisor조힘찬-
dc.contributor.authorShin, Seungmin-
dc.contributor.author신승민-
dc.date.accessioned2024-07-25T19:31:10Z-
dc.date.available2024-07-25T19:31:10Z-
dc.date.issued2023-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=1045881&flag=dissertationen_US
dc.identifier.urihttp://hdl.handle.net/10203/320653-
dc.description학위논문(석사) - 한국과학기술원 : 신소재공학과, 2023.8,[1책(면수없음) :]-
dc.description.abstractPerovskite light-emitting diodes (PeLEDs have developed rapidly in the past decade, and had attention as next-generation luminescent devices. The high luminescence efficiency of perovskite can be attributed to the spin-orbital coupling of heavy elements and the absence of inversion symmetry in the lattice. In this study, we synthesized perovskite using the asymmetric spacer, 2-(2-aminoethyl) isothiourea dihydrobromide (AIT) to investigate the possibility which improve by the asymmetricity. I adjusted cation composition and solvents in order to fabricate high luminescence film. (PLQY > 40%) In addition, there is correlation between slab distribution of quasi-2D perovskite and nanocrystal pinning (NCP) time by the saturation model. Furthermore, I indirectly assessed asymmetry's efficiency enhancement by examining spacer functional groups. The AIT, with asymmetry, has the maximum external quantum efficiency (EQE) of 3% and luminance of 1000 nit. Additionally, an interface defect passivation layer between the hole transport layer and the emissive layer further improves device efficiency, resulting in an EQE of 6% and a luminance of approximately 5000 nit.-
dc.languageeng-
dc.publisher한국과학기술원-
dc.subject준 이차원 페로브스카이트▼a발광다이오드▼a분리자▼a비대칭성▼a표면결함제어-
dc.subjectQuasi-2D perovskite▼aLight-emitting diodes▼aSpacer▼aAsymmetricity▼aInterface defect passivation-
dc.titleSpacer engineering of quasi-2D perovskites for high-efficiency light-emitting diodes-
dc.title.alternative고효율 준 이차원 페로브스카이트 발광다이오드를 위한 분리자 연구-
dc.typeThesis(Master)-
dc.identifier.CNRN325007-
dc.description.department한국과학기술원 :신소재공학과,-
dc.contributor.alternativeauthorCho, Himchan-
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