DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 조힘찬 | - |
dc.contributor.author | Shin, Seungmin | - |
dc.contributor.author | 신승민 | - |
dc.date.accessioned | 2024-07-25T19:31:10Z | - |
dc.date.available | 2024-07-25T19:31:10Z | - |
dc.date.issued | 2023 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=1045881&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/320653 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 신소재공학과, 2023.8,[1책(면수없음) :] | - |
dc.description.abstract | Perovskite light-emitting diodes (PeLEDs have developed rapidly in the past decade, and had attention as next-generation luminescent devices. The high luminescence efficiency of perovskite can be attributed to the spin-orbital coupling of heavy elements and the absence of inversion symmetry in the lattice. In this study, we synthesized perovskite using the asymmetric spacer, 2-(2-aminoethyl) isothiourea dihydrobromide (AIT) to investigate the possibility which improve by the asymmetricity. I adjusted cation composition and solvents in order to fabricate high luminescence film. (PLQY > 40%) In addition, there is correlation between slab distribution of quasi-2D perovskite and nanocrystal pinning (NCP) time by the saturation model. Furthermore, I indirectly assessed asymmetry's efficiency enhancement by examining spacer functional groups. The AIT, with asymmetry, has the maximum external quantum efficiency (EQE) of 3% and luminance of 1000 nit. Additionally, an interface defect passivation layer between the hole transport layer and the emissive layer further improves device efficiency, resulting in an EQE of 6% and a luminance of approximately 5000 nit. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | 준 이차원 페로브스카이트▼a발광다이오드▼a분리자▼a비대칭성▼a표면결함제어 | - |
dc.subject | Quasi-2D perovskite▼aLight-emitting diodes▼aSpacer▼aAsymmetricity▼aInterface defect passivation | - |
dc.title | Spacer engineering of quasi-2D perovskites for high-efficiency light-emitting diodes | - |
dc.title.alternative | 고효율 준 이차원 페로브스카이트 발광다이오드를 위한 분리자 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :신소재공학과, | - |
dc.contributor.alternativeauthor | Cho, Himchan | - |
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