DC Field | Value | Language |
---|---|---|
dc.contributor.author | Son, Bongkwon | ko |
dc.contributor.author | Zhang, Lin | ko |
dc.contributor.author | Jung, Yongduck | ko |
dc.contributor.author | Zhou, Hao | ko |
dc.contributor.author | Nam, Donguk | ko |
dc.contributor.author | Tan, Chuan Seng | ko |
dc.date.accessioned | 2024-07-13T13:00:19Z | - |
dc.date.available | 2024-07-13T13:00:19Z | - |
dc.date.created | 2024-07-13 | - |
dc.date.created | 2024-07-13 | - |
dc.date.issued | 2021-12 | - |
dc.identifier.citation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.36, no.12 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | http://hdl.handle.net/10203/320228 | - |
dc.description.abstract | Germanium-tin (GeSn) alloys have received much attention thanks to their optical/electrical properties and their operation in the mid-infrared range. However, dislocations/defects in GeSn films serve as trap states, limiting radiative recombination/generation via band-edges. In this work, the impact of the trap states in GeSn with varying Sn contents is investigated. The systematic study reveals that the defects/dislocations in GeSn contribute to the carrier dynamics, mainly originated from the trap states near GeSn/Ge interface. Through photoluminescence (PL) study, the broad PL peak of the trap state for GeSn exists at similar to 0.57 eV. The increase in Sn content mitigates the trap-related carrier dynamics. Besides, the increase in GeSn thickness effectively suppresses the interface-related carrier dynamic. By increasing thickness from 180 to similar to 900 nm, the external quantum efficiency is enhanced by similar to 10x. This study provides a comprehensive understanding of trap-related carrier dynamics in a GeSn material system at room temperature. | - |
dc.language | English | - |
dc.publisher | IOP Publishing Ltd | - |
dc.title | Systematic study on photoexcited carrier dynamics related to defects in GeSn films with low Sn content at room temperature | - |
dc.type | Article | - |
dc.identifier.wosid | 000718048500001 | - |
dc.identifier.scopusid | 2-s2.0-85119965120 | - |
dc.type.rims | ART | - |
dc.citation.volume | 36 | - |
dc.citation.issue | 12 | - |
dc.citation.publicationname | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.identifier.doi | 10.1088/1361-6641/ac2fb4 | - |
dc.contributor.localauthor | Nam, Donguk | - |
dc.contributor.nonIdAuthor | Son, Bongkwon | - |
dc.contributor.nonIdAuthor | Zhang, Lin | - |
dc.contributor.nonIdAuthor | Jung, Yongduck | - |
dc.contributor.nonIdAuthor | Zhou, Hao | - |
dc.contributor.nonIdAuthor | Tan, Chuan Seng | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | silicon photonics | - |
dc.subject.keywordAuthor | optoelectronic integration | - |
dc.subject.keywordAuthor | GeSn alloy | - |
dc.subject.keywordPlus | GERMANIUM-TIN | - |
dc.subject.keywordPlus | MU-M | - |
dc.subject.keywordPlus | PHOTODETECTOR | - |
dc.subject.keywordPlus | PHOTODIODE | - |
dc.subject.keywordPlus | LASERS | - |
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