DC Field | Value | Language |
---|---|---|
dc.contributor.author | Nam, Donguk | ko |
dc.contributor.author | Sukhdeo, David | ko |
dc.contributor.author | Cheng, Szu-Lin | ko |
dc.contributor.author | Roy, Arunanshu | ko |
dc.contributor.author | Huang, Kevin Chih-Yao | ko |
dc.contributor.author | Brongersma, Mark | ko |
dc.contributor.author | Nishi, Yoshio | ko |
dc.contributor.author | Saraswat, Krishna | ko |
dc.date.accessioned | 2024-07-05T00:00:08Z | - |
dc.date.available | 2024-07-05T00:00:08Z | - |
dc.date.created | 2024-07-05 | - |
dc.date.created | 2024-07-05 | - |
dc.date.created | 2024-07-05 | - |
dc.date.issued | 2012-03 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.100, no.13 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/320141 | - |
dc.description.abstract | We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LEDs) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100 nm redshift of the center wavelength because of the strain-induced direct band gap reduction. Finally, using tight-binding and finite-difference time domain simulations, we discuss the implications for highly efficient Ge lasers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3699224] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser | - |
dc.type | Article | - |
dc.identifier.wosid | 000302230800012 | - |
dc.identifier.scopusid | 2-s2.0-84859524658 | - |
dc.type.rims | ART | - |
dc.citation.volume | 100 | - |
dc.citation.issue | 13 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3699224 | - |
dc.contributor.localauthor | Nam, Donguk | - |
dc.contributor.nonIdAuthor | Sukhdeo, David | - |
dc.contributor.nonIdAuthor | Cheng, Szu-Lin | - |
dc.contributor.nonIdAuthor | Roy, Arunanshu | - |
dc.contributor.nonIdAuthor | Huang, Kevin Chih-Yao | - |
dc.contributor.nonIdAuthor | Brongersma, Mark | - |
dc.contributor.nonIdAuthor | Nishi, Yoshio | - |
dc.contributor.nonIdAuthor | Saraswat, Krishna | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | SILICON | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.