DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sukhdeo, David S. | ko |
dc.contributor.author | Gupta, Shashank | ko |
dc.contributor.author | Saraswat, Krishna C. | ko |
dc.contributor.author | Dutt, Birendra (Raj) | ko |
dc.contributor.author | Nam, Donguk | ko |
dc.date.accessioned | 2024-07-05T00:00:06Z | - |
dc.date.available | 2024-07-05T00:00:06Z | - |
dc.date.created | 2024-07-05 | - |
dc.date.created | 2024-07-05 | - |
dc.date.created | 2024-07-05 | - |
dc.date.issued | 2016-02 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.55, no.2 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/320138 | - |
dc.description.abstract | We theoretically investigate the methodology involved in the minimization of the threshold of a Ge-on-Si laser and maximization of the slope efficiency in the presence of both biaxial tensile strain and n-type doping. Our findings suggest that there exist ultimate limits beyond which no further benefit can be realized through increased tensile strain or n-type doping. In this study, we quantify these limits, showing that the optimal design for minimizing threshold involves approximately 3.7% biaxial tensile strain and 2 x 10(18)cm(-3) n-type doping, whereas the optimal design for maximum slope efficiency involves approximately 2.3% biaxial tensile strain with 1 x 10(19)cm(-3) n-type doping. Increasing the strain and doping beyond these limits will degrade the threshold and slope efficiency, respectively. (C) 2016 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Ultimate limits of biaxial tensile strain and n-type doping for realizing an efficient low-threshold Ge laser | - |
dc.type | Article | - |
dc.identifier.wosid | 000369005300026 | - |
dc.identifier.scopusid | 2-s2.0-84961303974 | - |
dc.type.rims | ART | - |
dc.citation.volume | 55 | - |
dc.citation.issue | 2 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.7567/JJAP.55.024301 | - |
dc.contributor.localauthor | Nam, Donguk | - |
dc.contributor.nonIdAuthor | Sukhdeo, David S. | - |
dc.contributor.nonIdAuthor | Gupta, Shashank | - |
dc.contributor.nonIdAuthor | Saraswat, Krishna C. | - |
dc.contributor.nonIdAuthor | Dutt, Birendra (Raj) | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | GERMANIUM | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | DETECTORS | - |
dc.subject.keywordPlus | PHOTONICS | - |
dc.subject.keywordPlus | GAIN | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | ON-CHIP | - |
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