DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, Ji-Man | ko |
dc.contributor.author | Ham, Gyeong-Do | ko |
dc.contributor.author | Kim, Seong-Yeon | ko |
dc.contributor.author | KIM, Jin-Ki | ko |
dc.contributor.author | Han, Joon-Kyu | ko |
dc.contributor.author | Yun, Seong-Yun | ko |
dc.contributor.author | Kim, Seong-Hak | ko |
dc.contributor.author | Lee, Sang-Won | ko |
dc.contributor.author | Jeon, Seung-Bae | ko |
dc.contributor.author | Kim, Dae-Shik | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2024-06-17T06:00:31Z | - |
dc.date.available | 2024-06-17T06:00:31Z | - |
dc.date.created | 2024-02-07 | - |
dc.date.created | 2024-02-07 | - |
dc.date.issued | 2024-04 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.45, no.4, pp.716 - 719 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/319800 | - |
dc.description.abstract | Semi-supervised learning (SSL) with pseudo-labeling is applied to the non-volatile computing-in-memory (nvCIM) architecture through weight updates of a synaptic transistor (synaptor). The synaptor is a tri-node FinFET enclosing a charge-trap layer. For on-chip training over extended periods, self-curing induced by electrothermal annealing (ETA) is utilized to raise the tunneling oxide temperature of the synaptor until it exceeds 500 ◦C. As a result, a classification accuracy of 86.4% is achieved by training only 1, 000 labeled datasets with self-curing operations. This accuracy level is comparable to that of supervised learning (SL) with 10, 000 labeled training datasets. Not only the MNIST but also the CIFAR-10 dataset was verified whether it yields similar results when using SSL. | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Self-Curable Synaptor With Tri-Node Charge-Trap FinFET for Semi-Supervised Learning | - |
dc.type | Article | - |
dc.identifier.scopusid | 2-s2.0-85184306685 | - |
dc.type.rims | ART | - |
dc.citation.volume | 45 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 716 | - |
dc.citation.endingpage | 719 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2024.3359600 | - |
dc.contributor.localauthor | Kim, Dae-Shik | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Kim, Seong-Yeon | - |
dc.contributor.nonIdAuthor | Kim, Seong-Hak | - |
dc.contributor.nonIdAuthor | Jeon, Seung-Bae | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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