Self-Curable Synaptor With Tri-Node Charge-Trap FinFET for Semi-Supervised Learning

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dc.contributor.authorYu, Ji-Manko
dc.contributor.authorHam, Gyeong-Doko
dc.contributor.authorKim, Seong-Yeonko
dc.contributor.authorKIM, Jin-Kiko
dc.contributor.authorHan, Joon-Kyuko
dc.contributor.authorYun, Seong-Yunko
dc.contributor.authorKim, Seong-Hakko
dc.contributor.authorLee, Sang-Wonko
dc.contributor.authorJeon, Seung-Baeko
dc.contributor.authorKim, Dae-Shikko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2024-06-17T06:00:31Z-
dc.date.available2024-06-17T06:00:31Z-
dc.date.created2024-02-07-
dc.date.created2024-02-07-
dc.date.issued2024-04-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.45, no.4, pp.716 - 719-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/319800-
dc.description.abstractSemi-supervised learning (SSL) with pseudo-labeling is applied to the non-volatile computing-in-memory (nvCIM) architecture through weight updates of a synaptic transistor (synaptor). The synaptor is a tri-node FinFET enclosing a charge-trap layer. For on-chip training over extended periods, self-curing induced by electrothermal annealing (ETA) is utilized to raise the tunneling oxide temperature of the synaptor until it exceeds 500 ◦C. As a result, a classification accuracy of 86.4% is achieved by training only 1, 000 labeled datasets with self-curing operations. This accuracy level is comparable to that of supervised learning (SL) with 10, 000 labeled training datasets. Not only the MNIST but also the CIFAR-10 dataset was verified whether it yields similar results when using SSL.-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleSelf-Curable Synaptor With Tri-Node Charge-Trap FinFET for Semi-Supervised Learning-
dc.typeArticle-
dc.identifier.scopusid2-s2.0-85184306685-
dc.type.rimsART-
dc.citation.volume45-
dc.citation.issue4-
dc.citation.beginningpage716-
dc.citation.endingpage719-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2024.3359600-
dc.contributor.localauthorKim, Dae-Shik-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorKim, Seong-Yeon-
dc.contributor.nonIdAuthorKim, Seong-Hak-
dc.contributor.nonIdAuthorJeon, Seung-Bae-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
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