DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seok, Yongwook | ko |
dc.contributor.author | Jang, Hanbyeol | ko |
dc.contributor.author | Choi, Yitaek | ko |
dc.contributor.author | Ko, Yeonghyeon | ko |
dc.contributor.author | Kim, Minje | ko |
dc.contributor.author | Im, Heungsoon | ko |
dc.contributor.author | Watanabe, Kenji | ko |
dc.contributor.author | Taniguchi, Takashi | ko |
dc.contributor.author | Seol, Jae Hun | ko |
dc.contributor.author | Chee, Sang-Soo | ko |
dc.contributor.author | Nah, Junghyo | ko |
dc.contributor.author | Lee, Kayoung | ko |
dc.date.accessioned | 2024-06-07T06:00:10Z | - |
dc.date.available | 2024-06-07T06:00:10Z | - |
dc.date.created | 2024-06-07 | - |
dc.date.created | 2024-06-07 | - |
dc.date.created | 2024-06-07 | - |
dc.date.issued | 2024-03 | - |
dc.identifier.citation | ACS NANO, v.18, no.11, pp.8099 - 8106 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | http://hdl.handle.net/10203/319662 | - |
dc.description.abstract | Creating a high-frequency electron system demands a high saturation velocity (upsilon(sat)). Herein, we report the high-field transport properties of multilayer van der Waals (vdW) indium selenide (InSe). The InSe is on a hexagonal boron nitride substrate and encapsulated by a thin, noncontinuous In layer, resulting in an impressive electron mobility reaching 2600 cm(2)/(V s) at room temperature. The high-mobility InSe achieves upsilon(sat) exceeding 2 x 10(7) cm/s, which is superior to those of other gapped vdW semiconductors, and exhibits a 50-60% improvement in upsilon(sat) when cooled to 80 K. The temperature dependence of upsilon(sat) suggests an optical phonon energy ((h) over bar omega(op)) for InSe in the range of 23-27 meV, previously reported values for InSe. It is also notable that the measured upsilon(sat) values exceed what is expected according to the optical phonon emission model due to weak electron-phonon scattering. The superior upsilon(sat) of our InSe, despite its relatively small (h) over bar omega(op), reveals its potential for high-frequency electronics, including applications to control cryogenic quantum computers in close proximity. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | High-Field Electron Transport and High Saturation Velocity in Multilayer Indium Selenide Transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 001181207800001 | - |
dc.identifier.scopusid | 2-s2.0-85187325377 | - |
dc.type.rims | ART | - |
dc.citation.volume | 18 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 8099 | - |
dc.citation.endingpage | 8106 | - |
dc.citation.publicationname | ACS NANO | - |
dc.identifier.doi | 10.1021/acsnano.3c11613 | - |
dc.contributor.localauthor | Lee, Kayoung | - |
dc.contributor.nonIdAuthor | Seok, Yongwook | - |
dc.contributor.nonIdAuthor | Jang, Hanbyeol | - |
dc.contributor.nonIdAuthor | Choi, Yitaek | - |
dc.contributor.nonIdAuthor | Ko, Yeonghyeon | - |
dc.contributor.nonIdAuthor | Kim, Minje | - |
dc.contributor.nonIdAuthor | Im, Heungsoon | - |
dc.contributor.nonIdAuthor | Watanabe, Kenji | - |
dc.contributor.nonIdAuthor | Taniguchi, Takashi | - |
dc.contributor.nonIdAuthor | Seol, Jae Hun | - |
dc.contributor.nonIdAuthor | Chee, Sang-Soo | - |
dc.contributor.nonIdAuthor | Nah, Junghyo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | current saturation | - |
dc.subject.keywordAuthor | saturation velocity | - |
dc.subject.keywordAuthor | optical phonon | - |
dc.subject.keywordAuthor | indium selenide | - |
dc.subject.keywordAuthor | mobility | - |
dc.subject.keywordPlus | METAL-INSULATOR-TRANSITION | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | GAN | - |
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