DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전덕영 | ko |
dc.contributor.author | 박선중 | ko |
dc.contributor.author | 조현진 | ko |
dc.contributor.author | 김규남 | ko |
dc.date.accessioned | 2024-05-14T09:00:50Z | - |
dc.date.available | 2024-05-14T09:00:50Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/319362 | - |
dc.description.abstract | The invention relates to a quantum-dot light emitting diode, a method of fabricating the quantum-dot light emitting diode and a quantum-dot light emitting display device. The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer. | - |
dc.title | QUANTUM-DOT LIGHT EMITTING DIODE, METHOD OF FABRICATING THE QUANTUM-DOT LIGHT EMITTING DIODE AND QUANTUM-DOT LIGHT EMITTING DISPLAY DEVICE | - |
dc.title.alternative | 양자점 발광다이오드, 그 제조 방법 및 양자점 발광표시장치 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | 전덕영 | - |
dc.contributor.nonIdAuthor | 김규남 | - |
dc.contributor.assignee | KAIST, LG Display Co.,Ltd. | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 202010548997.X | - |
dc.identifier.patentRegistrationNumber | 112133839 | - |
dc.date.application | 2020-06-16 | - |
dc.date.registration | 2023-09-29 | - |
dc.publisher.country | CC | - |
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