Method of fabrication and control of nano-structure array by angle-resolved exposure in proximity-field nano patterning노광 각도가 조절된 근접장 패터닝을 이용한 나노구조의 조절 및 제작
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jeon, Seokwoo | ko |
| dc.contributor.author | Nam, Sang Hyeon | ko |
| dc.contributor.author | Lee, Jisun | ko |
| dc.date.accessioned | 2024-05-14T03:00:29Z | - |
| dc.date.available | 2024-05-14T03:00:29Z | - |
| dc.identifier.uri | http://hdl.handle.net/10203/319333 | - |
| dc.description.abstract | A method for fabricating a nano-structure includes: providing a phase mask having an uneven lattice structure to contact a photoresist film; exposing the photoresist film to a light through the phase mask such that the light is obliquely incident on a surface of the photoresist film; and developing the photoresist film to form a nano-structure. | - |
| dc.title | Method of fabrication and control of nano-structure array by angle-resolved exposure in proximity-field nano patterning | - |
| dc.title.alternative | 노광 각도가 조절된 근접장 패터닝을 이용한 나노구조의 조절 및 제작 | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | Jeon, Seokwoo | - |
| dc.contributor.nonIdAuthor | Lee, Jisun | - |
| dc.contributor.assignee | KAIST, Samsung Electronics Co.,Ltd. | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 17229478 | - |
| dc.identifier.patentRegistrationNumber | 11837470 | - |
| dc.date.application | 2021-04-13 | - |
| dc.date.registration | 2023-12-05 | - |
| dc.publisher.country | US | - |
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