Area-selective atomic layer deposition on 2D monolayer lateral superlattices

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dc.contributor.authorPark, Jeongwonko
dc.contributor.authorKwak, Seung Jaeko
dc.contributor.authorKang, Suminko
dc.contributor.authorOh, Saeyoungko
dc.contributor.authorShin, Bongkiko
dc.contributor.authorNoh, Gichangko
dc.contributor.authorKim, TaeSooko
dc.contributor.authorKim, Changhwanko
dc.contributor.authorPark, Hyeonbinko
dc.contributor.authorOh Seung Hoonko
dc.contributor.authorKang, Woojinko
dc.contributor.authorHur, Namwookko
dc.contributor.authorChai, Hyun-Junko
dc.contributor.authorKang, Minsooko
dc.contributor.authorKwon Seongdaeko
dc.contributor.authorLee, Jaehyunko
dc.contributor.authorLee, Yongjoonko
dc.contributor.authorMoon, Eoramko
dc.contributor.authorShi, Chuqiaoko
dc.contributor.authorLou, Junko
dc.contributor.authorLee, Won Boko
dc.contributor.authorKwak, Joon Youngko
dc.contributor.authorYang, Heejunko
dc.contributor.authorChung, Taek-Moko
dc.contributor.authorEom, Taeyongko
dc.contributor.authorSuh, Joonkiko
dc.contributor.authorHan, Yimoko
dc.contributor.authorJeong, Hu Youngko
dc.contributor.authorKim, Yongjooko
dc.contributor.authorKang, Kibumko
dc.date.accessioned2024-04-29T06:00:19Z-
dc.date.available2024-04-29T06:00:19Z-
dc.date.created2024-04-29-
dc.date.created2024-04-29-
dc.date.issued2024-03-
dc.identifier.citationNATURE COMMUNICATIONS, v.15, no.1-
dc.identifier.urihttp://hdl.handle.net/10203/319255-
dc.description.abstractThe advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices. Recently, area-selective atomic layer deposition (AS-ALD), which allows the direct deposition of target materials on the desired area using a deposition barrier, has emerged as an alternative patterning process. However, the AS-ALD process remains challenging to use for the improvement of patterning resolution and selectivity. In this study, we report a superlattice-based AS-ALD (SAS-ALD) process using a two-dimensional (2D) MoS2-MoSe2 lateral superlattice as a pre-defining template. We achieved a minimum half pitch size of a sub-10 nm scale for the resulting AS-ALD on the 2D superlattice template by controlling the duration time of chemical vapor deposition (CVD) precursors. SAS-ALD introduces a mechanism that enables selectivity through the adsorption and diffusion processes of ALD precursors, distinctly different from conventional AS-ALD method. This technique facilitates selective deposition even on small pattern sizes and is compatible with the use of highly reactive precursors like trimethyl aluminum. Moreover, it allows for the selective deposition of a variety of materials, including Al2O3, HfO2, Ru, Te, and Sb2Se3.-
dc.languageEnglish-
dc.publisherNATURE PORTFOLIO-
dc.titleArea-selective atomic layer deposition on 2D monolayer lateral superlattices-
dc.typeArticle-
dc.identifier.wosid001181488200005-
dc.identifier.scopusid2-s2.0-85187126591-
dc.type.rimsART-
dc.citation.volume15-
dc.citation.issue1-
dc.citation.publicationnameNATURE COMMUNICATIONS-
dc.identifier.doi10.1038/s41467-024-46293-w-
dc.contributor.localauthorYang, Heejun-
dc.contributor.localauthorKang, Kibum-
dc.contributor.nonIdAuthorKwak, Seung Jae-
dc.contributor.nonIdAuthorKang, Sumin-
dc.contributor.nonIdAuthorOh, Saeyoung-
dc.contributor.nonIdAuthorShin, Bongki-
dc.contributor.nonIdAuthorKim, Changhwan-
dc.contributor.nonIdAuthorPark, Hyeonbin-
dc.contributor.nonIdAuthorOh Seung Hoon-
dc.contributor.nonIdAuthorKang, Woojin-
dc.contributor.nonIdAuthorHur, Namwook-
dc.contributor.nonIdAuthorKang, Minsoo-
dc.contributor.nonIdAuthorKwon Seongdae-
dc.contributor.nonIdAuthorLee, Jaehyun-
dc.contributor.nonIdAuthorMoon, Eoram-
dc.contributor.nonIdAuthorShi, Chuqiao-
dc.contributor.nonIdAuthorLou, Jun-
dc.contributor.nonIdAuthorLee, Won Bo-
dc.contributor.nonIdAuthorKwak, Joon Young-
dc.contributor.nonIdAuthorChung, Taek-Mo-
dc.contributor.nonIdAuthorEom, Taeyong-
dc.contributor.nonIdAuthorSuh, Joonki-
dc.contributor.nonIdAuthorHan, Yimo-
dc.contributor.nonIdAuthorJeong, Hu Young-
dc.contributor.nonIdAuthorKim, Yongjoo-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusMOS2-
dc.subject.keywordPlusPOINTS-
dc.subject.keywordPlusAL2O3-
dc.subject.keywordPlusTOTAL-ENERGY CALCULATIONS-
dc.subject.keywordPlusELASTIC BAND METHOD-
Appears in Collection
PH-Journal Papers(저널논문)MS-Journal Papers(저널논문)
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