DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xu, Wentao | ko |
dc.contributor.author | Lee, Yeongjun | ko |
dc.contributor.author | Min, Sung-Yong | ko |
dc.contributor.author | Park, Cheolmin | ko |
dc.contributor.author | Lee, Tae-Woo | ko |
dc.date.accessioned | 2024-03-04T02:00:44Z | - |
dc.date.available | 2024-03-04T02:00:44Z | - |
dc.date.created | 2024-02-26 | - |
dc.date.created | 2024-02-26 | - |
dc.date.issued | 2016-01 | - |
dc.identifier.citation | ADVANCED MATERIALS, v.28, no.3, pp.527 - 532 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | http://hdl.handle.net/10203/318369 | - |
dc.description.abstract | A rapid, scalable, and designable approach to produce a cross-shaped memristor array is demonstrated using an inorganic-nanowire digital-alignment technique and a one-step reduction process. Two-dimensional arrays of perpendicularly aligned, individually conductive Cu-nanowires with a nanometer-scale CuxO layer sandwiched at each cross point are produced. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Simple, Inexpensive, and Rapid Approach to Fabricate Cross-Shaped Memristors Using an Inorganic-Nanowire-Digital-Alignment Technique and a One-Step Reduction Process | - |
dc.type | Article | - |
dc.identifier.wosid | 000368712900016 | - |
dc.identifier.scopusid | 2-s2.0-84955207820 | - |
dc.type.rims | ART | - |
dc.citation.volume | 28 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 527 | - |
dc.citation.endingpage | 532 | - |
dc.citation.publicationname | ADVANCED MATERIALS | - |
dc.identifier.doi | 10.1002/adma.201503153 | - |
dc.contributor.localauthor | Lee, Yeongjun | - |
dc.contributor.nonIdAuthor | Xu, Wentao | - |
dc.contributor.nonIdAuthor | Min, Sung-Yong | - |
dc.contributor.nonIdAuthor | Park, Cheolmin | - |
dc.contributor.nonIdAuthor | Lee, Tae-Woo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | RESISTIVE MEMORY DEVICES | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CORE-SHELL NANOWIRES | - |
dc.subject.keywordPlus | SEMICONDUCTOR NANOWIRES | - |
dc.subject.keywordPlus | ALIGNED NANOWIRES | - |
dc.subject.keywordPlus | BUILDING-BLOCKS | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | GRAPHENE | - |
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