Effect of growth condition on the electrical and magnetic properties of sputtered ZnCo2O4 films

Abstract

We report on the effect of the oxygen partial pressure ratio in the sputtering gas mixture on the electrical and magnetic properties of cubic spinel ZnCo2O4 thin films grown by reactive magnetron sputtering. The conduction type and carrier concentration in ZnCo 2O4 films were found to be dependent on the oxygen partial pressure ratio. The maximum electron and hole concentration at 300 K were estimated to be as high as 1.37 × 1020 cm-3 and 2.81 × 1020 cm-3, respectively. While an antiferromagnetic coupling was found for n-type ZnCo2O4, a ferromagnetic interaction was observable inp-type ZnCo2O 4, indicating hole-induced ferromagnetic transition in spinel ZnCo2O4.