Threshold Modulative Artificial GABAergic Nociceptor

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dc.contributor.authorKim, Geunyoungko
dc.contributor.authorLee, Younghyunko
dc.contributor.authorJeon, Jae Bumko
dc.contributor.authorCheong, Woon Hyungko
dc.contributor.authorPark, Woojoonko
dc.contributor.authorSong, Hanchanko
dc.contributor.authorKim, Kyung Minko
dc.date.accessioned2023-12-06T05:00:40Z-
dc.date.available2023-12-06T05:00:40Z-
dc.date.created2023-11-06-
dc.date.issued2023-11-
dc.identifier.citationADVANCED MATERIALS, v.35, no.47-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10203/315816-
dc.description.abstractGamma-aminobutyric acid (GABA) is a crucial inhibitory neurotransmitter of the central nervous system. It modifies the signal threshold of the nociceptor, allowing it to react to external stimuli in various circumstances. Thus, GABAergic behaviors are critical characteristics of adaptive behavior in life. Here, a threshold-modulative artificial GABAergic nociceptor is reported for the first time at a Pt/Ti/Nb2O5-x/Al2O3-y/Pt/Ti (top to bottom) of the double charge trapping structure. The Al2O3-y layer contains deep defect states that function similarly to the GABA neurotransmitter in modulating the signal threshold. Meanwhile, the Nb2O5-x layer traps volatile charges and produces nociceptive behaviors. The combined dynamics of the two layers readily offer threshold-modulative GABAergic nociceptive behaviors. Based on these GABAergic behaviors, a method of implementing hot- and cold-sensitive thermoreceptors is demonstrated and shows its potential applications in advanced sensory devices. A threshold-modulative artificial GABAergic nociceptor is proposed for the first time. The device includes two types of charge traps, demonstrating biological second-order nociceptive behaviors. Also, its temperature-dependent trapping characteristics can implement hot- and cold-sensitive thermoreceptors by controlling the trapping states, enabling it to detect the surrounding temperature conditions.image-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleThreshold Modulative Artificial GABAergic Nociceptor-
dc.typeArticle-
dc.identifier.wosid001087472500001-
dc.identifier.scopusid2-s2.0-85174578023-
dc.type.rimsART-
dc.citation.volume35-
dc.citation.issue47-
dc.citation.publicationnameADVANCED MATERIALS-
dc.identifier.doi10.1002/adma.202304148-
dc.contributor.localauthorKim, Kyung Min-
dc.contributor.nonIdAuthorLee, Younghyun-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCharge trapping-
dc.subject.keywordAuthorGABAergic-
dc.subject.keywordAuthorMemristors-
dc.subject.keywordAuthorNociceptors-
dc.subject.keywordAuthorThreshold-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusLOW-POWER-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusMECHANISMS-
dc.subject.keywordPlusINJECTION-
dc.subject.keywordPlusCHANNELS-
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