Dielectric Engineering for Enhanced top gate Monolayer MoS2 Transistor Using iCVD-based High-k Dielectric
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박서학 | ko |
| dc.contributor.author | 이상훈 | ko |
| dc.contributor.author | 임형진 | ko |
| dc.contributor.author | 최성율 | ko |
| dc.date.accessioned | 2023-11-28T07:07:16Z | - |
| dc.date.available | 2023-11-28T07:07:16Z | - |
| dc.date.created | 2023-11-27 | - |
| dc.date.issued | 2022-07-11 | - |
| dc.identifier.citation | 제 9회 한국 그래핀 심포지엄 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/315345 | - |
| dc.language | English | - |
| dc.publisher | 한국그래핀학회 | - |
| dc.title | Dielectric Engineering for Enhanced top gate Monolayer MoS2 Transistor Using iCVD-based High-k Dielectric | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제 9회 한국 그래핀 심포지엄 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 부산 해운대 한화리조트 | - |
| dc.contributor.localauthor | 최성율 | - |
| dc.contributor.nonIdAuthor | 이상훈 | - |
| dc.contributor.nonIdAuthor | 임형진 | - |
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