Enhancement mode MoS2 FET Engineering via O2 plasma treatment with Al2O3 barrier layer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이인성 | ko |
| dc.contributor.author | 임형진 | ko |
| dc.contributor.author | 송기성 | ko |
| dc.contributor.author | 최윤재 | ko |
| dc.contributor.author | 이현지 | ko |
| dc.contributor.author | 최성율 | ko |
| dc.date.accessioned | 2023-11-28T06:03:41Z | - |
| dc.date.available | 2023-11-28T06:03:41Z | - |
| dc.date.created | 2023-11-27 | - |
| dc.date.issued | 2023-02-15 | - |
| dc.identifier.citation | 제30회 한국반도체학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/315326 | - |
| dc.language | English | - |
| dc.publisher | 한국반도체연구조합 | - |
| dc.title | Enhancement mode MoS2 FET Engineering via O2 plasma treatment with Al2O3 barrier layer | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제30회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 강원도 하이원리조트 | - |
| dc.contributor.localauthor | 최성율 | - |
| dc.contributor.nonIdAuthor | 임형진 | - |
| dc.contributor.nonIdAuthor | 송기성 | - |
| dc.contributor.nonIdAuthor | 최윤재 | - |
| dc.contributor.nonIdAuthor | 이현지 | - |
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