Microscopic bit-level wear-leveling for NAND flash memory

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dc.contributor.authorSong, Yongko
dc.contributor.authorHwang, Woominko
dc.contributor.authorPark, Ki-Woongko
dc.contributor.authorPark, Kyu Hoko
dc.date.accessioned2023-11-15T05:00:20Z-
dc.date.available2023-11-15T05:00:20Z-
dc.date.created2023-11-15-
dc.date.issued2013-09-
dc.identifier.citation4th International Conference on Mobile, Ubiquitous, and Intelligent Computing, MUSIC 2013, pp.315 - 320-
dc.identifier.urihttp://hdl.handle.net/10203/314691-
dc.description.abstractBy microscopically observing widely used data files, we identified the considerable room for life time improvement in NAND flash memory, which is due to the discovery of a non-uniformity in bit-level data patterns. In an attempt to exploit the discovery, we propose a novel bit-level wear-leveling scheme. Instead of considering only the view of page-level or block-level, we incorporate the non-uniformity in data encoding patterns into wear-leveling scheme. Because of its orthogonality to the existing block-level wear-leveling approaches, our solution can be adopted over the existing solutions without considerable overhead and extend NAND flash's life span up to 36% in case of SLC.-
dc.languageEnglish-
dc.publisherSpringer Verlag-
dc.titleMicroscopic bit-level wear-leveling for NAND flash memory-
dc.typeConference-
dc.identifier.scopusid2-s2.0-84958523465-
dc.type.rimsCONF-
dc.citation.beginningpage315-
dc.citation.endingpage320-
dc.citation.publicationname4th International Conference on Mobile, Ubiquitous, and Intelligent Computing, MUSIC 2013-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationGwangju-
dc.identifier.doi10.1007/978-3-642-40675-1_48-
dc.contributor.localauthorPark, Kyu Ho-
dc.contributor.nonIdAuthorPark, Ki-Woong-
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EE-Conference Papers(학술회의논문)
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