DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.contributor.author | Kim, HO | ko |
dc.contributor.author | Cho, SH | ko |
dc.contributor.author | Ryu, MK | ko |
dc.contributor.author | Yang, JH | ko |
dc.contributor.author | Ko, Jong Beom | ko |
dc.contributor.author | Hwang, CS | ko |
dc.date.accessioned | 2023-10-31T07:00:22Z | - |
dc.date.available | 2023-10-31T07:00:22Z | - |
dc.date.created | 2023-10-31 | - |
dc.date.issued | 2014-10 | - |
dc.identifier.citation | 12th Symposium on Thin Film Transistor Technologies, TFT 2014 - 2014 ECS and SMEQ Joint International Meeting, pp.123 - 128 | - |
dc.identifier.issn | 1938-5862 | - |
dc.identifier.uri | http://hdl.handle.net/10203/313954 | - |
dc.description.abstract | We adopted SiO2 film by means of plasma enhanced atomic layer deposition (PEALD) as the first gate insulator of top gate IGZO TFT. TFT post-annealed at 300°C shows mobility, Vth, and S.S of 39.9 cm2/V.s, -1V, and 0.32 V/dec., respectively. We investigated the effect of H in the gate insulator during the annealing with the comparison of bottom gate coplanar TFT with ALD grown alumina film as the gate insulator. | - |
dc.language | English | - |
dc.publisher | Electrochemical Society Inc. | - |
dc.title | Gate insulator for high mobility oxide TFT | - |
dc.type | Conference | - |
dc.identifier.wosid | 000356775400018 | - |
dc.identifier.scopusid | 2-s2.0-84921298123 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 123 | - |
dc.citation.endingpage | 128 | - |
dc.citation.publicationname | 12th Symposium on Thin Film Transistor Technologies, TFT 2014 - 2014 ECS and SMEQ Joint International Meeting | - |
dc.identifier.conferencecountry | MX | - |
dc.identifier.conferencelocation | Cancun | - |
dc.identifier.doi | 10.1149/06410.0123ecst | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Kim, HO | - |
dc.contributor.nonIdAuthor | Cho, SH | - |
dc.contributor.nonIdAuthor | Ryu, MK | - |
dc.contributor.nonIdAuthor | Yang, JH | - |
dc.contributor.nonIdAuthor | Hwang, CS | - |
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