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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Top gate high mobility oxide TFT with double layered gate insulator

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dc.contributor.authorKim, Yujinko
dc.contributor.authorPark, Kyoungwooko
dc.contributor.authorKo, Jong-Beomko
dc.contributor.authorMun, Geumbiko
dc.contributor.authorPark, Sang-Hee Koko
dc.date.accessioned2023-10-20T03:00:16Z-
dc.date.available2023-10-20T03:00:16Z-
dc.date.created2023-10-20-
dc.date.issued2016-12-
dc.identifier.citation23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016, pp.779 - 781-
dc.identifier.urihttp://hdl.handle.net/10203/313593-
dc.description.abstractWe report top gate structured high mobility oxide TFT with high stability under the bias and current stress by using double layered gate insulator. Alumina gate insulator deposited by ALD plays key role both as the H barrier and in the formation of defects less interface with active layer.-
dc.languageEnglish-
dc.publisherSociety for Information Display-
dc.titleTop gate high mobility oxide TFT with double layered gate insulator-
dc.typeConference-
dc.identifier.scopusid2-s2.0-85050509465-
dc.type.rimsCONF-
dc.citation.beginningpage779-
dc.citation.endingpage781-
dc.citation.publicationname23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016-
dc.identifier.conferencecountryJA-
dc.identifier.conferencelocationFukuoka-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorKim, Yujin-
dc.contributor.nonIdAuthorPark, Kyoungwoo-
dc.contributor.nonIdAuthorKo, Jong-Beom-
dc.contributor.nonIdAuthorMun, Geumbi-
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MS-Conference Papers(학술회의논문)
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