MoS2-based 3D stackable charge-trap memory with AlN interface layer for reducing optical phonon scattering

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dc.contributor.authorBae, Sanggeunko
dc.contributor.authorOh, Jungyeopko
dc.contributor.authorKang, Minguko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2023-10-16T01:03:56Z-
dc.date.available2023-10-16T01:03:56Z-
dc.date.created2023-10-13-
dc.date.issued2023-03-09-
dc.identifier.citationIEEE EDTM 2023-
dc.identifier.urihttp://hdl.handle.net/10203/313352-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleMoS2-based 3D stackable charge-trap memory with AlN interface layer for reducing optical phonon scattering-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameIEEE EDTM 2023-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationCOEX, Seoul-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorBae, Sanggeun-
dc.contributor.nonIdAuthorOh, Jungyeop-
dc.contributor.nonIdAuthorKang, Mingu-
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EE-Conference Papers(학술회의논문)
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