Dielectric engineering with amorphous Boron Nitride film for high-performance MoS2-based field effect transistor

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 46
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorLee, Sejinko
dc.contributor.authorBae, Sanggeunko
dc.contributor.authorKang, Minguko
dc.contributor.authorAhn, Wonbaeko
dc.contributor.authorHong, Woonggiko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2023-10-16T01:03:30Z-
dc.date.available2023-10-16T01:03:30Z-
dc.date.created2023-10-13-
dc.date.issued2023-07-06-
dc.identifier.citationNANO KOREA 2023 Symposium-
dc.identifier.urihttp://hdl.handle.net/10203/313347-
dc.languageEnglish-
dc.publisherKorea Nanotechnology Research Society (KoNTRS)-
dc.titleDielectric engineering with amorphous Boron Nitride film for high-performance MoS2-based field effect transistor-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameNANO KOREA 2023 Symposium-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationKINTEX-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorLee, Sejin-
dc.contributor.nonIdAuthorBae, Sanggeun-
dc.contributor.nonIdAuthorKang, Mingu-
dc.contributor.nonIdAuthorAhn, Wonbae-
dc.contributor.nonIdAuthorHong, Woonggi-
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0