Quantitative analysis of carrier escape efficiency in GaN-based light-emitting diodes
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lim, Seung-Hyuk | ko |
| dc.contributor.author | Ko, Young-Ho | ko |
| dc.contributor.author | Cho, Yong-Hoon | ko |
| dc.date.accessioned | 2023-10-10T02:00:25Z | - |
| dc.date.available | 2023-10-10T02:00:25Z | - |
| dc.date.created | 2023-10-10 | - |
| dc.date.issued | 2015-08 | - |
| dc.identifier.citation | 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/313102 | - |
| dc.description.abstract | Internal quantum efficiency, non-radiative efficiency in the active region, and efficiency of carrier escape out of the active region in InGaN-based light-emitting diode are deduced by comparison between open- and short-circuit photoluminescence experiments. | - |
| dc.language | English | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | Quantitative analysis of carrier escape efficiency in GaN-based light-emitting diodes | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-84964054426 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | Busan | - |
| dc.identifier.doi | 10.1109/CLEOPR.2015.7376084 | - |
| dc.contributor.localauthor | Cho, Yong-Hoon | - |
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