Extraction of the parameters of the coupling capacitance hysteresis cycle for TSV transient modeling

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dc.contributor.authorPiersanti, Sko
dc.contributor.authorPellegrino, Eko
dc.contributor.authorDe Paulis, Fko
dc.contributor.authorOrlandi, Ako
dc.contributor.authorKim, Jounghoko
dc.contributor.authorFan, Junko
dc.date.accessioned2023-10-05T11:00:26Z-
dc.date.available2023-10-05T11:00:26Z-
dc.date.created2023-10-05-
dc.date.issued2016-07-
dc.identifier.citation2016 IEEE International Symposium on Electromagnetic Compatibility, EMC 2016, pp.406 - 411-
dc.identifier.issn2158-110-
dc.identifier.urihttp://hdl.handle.net/10203/313043-
dc.description.abstractThe paper deals with the extraction, from the measurement, of the parameters needed to identify in time domain the hysteretic behavior of the coupling capacitance of through silicon via (TSV). The algorithm is developed in such a way that the equivalent capacitance model can be implemented into standard circuit simulators. Results showing the effect of the hysteresis on the crosstalk among TSV and IC active devices are shown and discussed.-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleExtraction of the parameters of the coupling capacitance hysteresis cycle for TSV transient modeling-
dc.typeConference-
dc.identifier.wosid000387117700097-
dc.identifier.scopusid2-s2.0-84990982090-
dc.type.rimsCONF-
dc.citation.beginningpage406-
dc.citation.endingpage411-
dc.citation.publicationname2016 IEEE International Symposium on Electromagnetic Compatibility, EMC 2016-
dc.identifier.conferencecountryCN-
dc.identifier.conferencelocationOttawa-
dc.identifier.doi10.1109/ISEMC.2016.7571682-
dc.contributor.localauthorKim, Joungho-
dc.contributor.nonIdAuthorPiersanti, S-
dc.contributor.nonIdAuthorPellegrino, E-
dc.contributor.nonIdAuthorDe Paulis, F-
dc.contributor.nonIdAuthorOrlandi, A-
dc.contributor.nonIdAuthorFan, Jun-
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