Radiation hardness performance of 2 Gbit LPDDR SDRAM fabricated on epitaxial wafer for space applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Mi Young | ko |
| dc.contributor.author | Chae, JangSoo | ko |
| dc.contributor.author | Lee, Chol | ko |
| dc.contributor.author | Lee, Jungsu | ko |
| dc.contributor.author | Shin, ImHyu | ko |
| dc.contributor.author | Ji, Sinae | ko |
| dc.date.accessioned | 2023-09-21T11:00:17Z | - |
| dc.date.available | 2023-09-21T11:00:17Z | - |
| dc.date.created | 2023-09-21 | - |
| dc.date.issued | 2016-07 | - |
| dc.identifier.citation | 2016 IEEE Radiation Effects Data Workshop, REDW 2016 | - |
| dc.identifier.issn | 2154-0519 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/312835 | - |
| dc.description.abstract | Radiation hardness performance of 2 Gbit low-power double data rate synchronous dynamic random access memories (LPDDR SDRAMs) fabricated on a 4 μm epitaxial layer (38 nm CMOS technology) are presented. | - |
| dc.language | English | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | Radiation hardness performance of 2 Gbit LPDDR SDRAM fabricated on epitaxial wafer for space applications | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000402167600037 | - |
| dc.identifier.scopusid | 2-s2.0-85018471030 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2016 IEEE Radiation Effects Data Workshop, REDW 2016 | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Portland, OR | - |
| dc.identifier.doi | 10.1109/NSREC.2016.7891729 | - |
| dc.contributor.localauthor | Park, Mi Young | - |
| dc.contributor.localauthor | Chae, JangSoo | - |
| dc.contributor.localauthor | Lee, Chol | - |
| dc.contributor.localauthor | Shin, ImHyu | - |
| dc.contributor.nonIdAuthor | Lee, Jungsu | - |
| dc.contributor.nonIdAuthor | Ji, Sinae | - |
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