A Highly Integrated Crosspoint Array Using Self-rectifying FTJ for Dual-mode Operations: CAM and PUF

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dc.contributor.authorLim, Seheeko
dc.contributor.authorGoh, Younginko
dc.contributor.authorLee, Young Kyuko
dc.contributor.authorKo, Dong Hanko
dc.contributor.authorHwang, Junghyeonko
dc.contributor.authorKim, Minkiko
dc.contributor.authorJeong, Yeongseokko
dc.contributor.authorShin, Hunbeomko
dc.contributor.authorJeon, Sanghunko
dc.contributor.authorJung, Seong-Ookko
dc.date.accessioned2023-09-18T06:00:45Z-
dc.date.available2023-09-18T06:00:45Z-
dc.date.created2023-09-18-
dc.date.issued2022-09-
dc.identifier.citation48th IEEE European Solid State Circuits Conference, ESSCIRC 2022, pp.113 - 116-
dc.identifier.urihttp://hdl.handle.net/10203/312701-
dc.description.abstractThis study proposes a self-rectifying ferroelectric tunnel junction (SR-FTJ) crosspoint array which affords dual-mode operation as content-addressable memory (CAM) and physically unclonable function (PUF). The PUF mode operation of the proposed SR-FTJ crosspoint array does not require any temporary transfer of stored CAM data to buffer, which prevents additional area overhead or potential data security threats. Experimental measurements verify the feasibility of the dual-mode operation. Further simulations using the SR-FTJ model reflecting measured characteristics show that the proposed SR-FTJ crosspoint array reduces area by at least 88.1 % up to 97.4 % compared to the previous structures that implement individual CAM and PUF. In addition, the proposed SR-FTJ crosspoint array achieves the lowest search energy (2.05 fJ/search/bit) and the highest randomness (Hamming weight of 0.5000) among the structures.-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleA Highly Integrated Crosspoint Array Using Self-rectifying FTJ for Dual-mode Operations: CAM and PUF-
dc.typeConference-
dc.identifier.wosid000886608500025-
dc.identifier.scopusid2-s2.0-85141491007-
dc.type.rimsCONF-
dc.citation.beginningpage113-
dc.citation.endingpage116-
dc.citation.publicationname48th IEEE European Solid State Circuits Conference, ESSCIRC 2022-
dc.identifier.conferencecountryIT-
dc.identifier.conferencelocationMilan-
dc.identifier.doi10.1109/ESSCIRC55480.2022.9911355-
dc.contributor.localauthorJeon, Sanghun-
dc.contributor.nonIdAuthorLim, Sehee-
dc.contributor.nonIdAuthorLee, Young Kyu-
dc.contributor.nonIdAuthorKo, Dong Han-
dc.contributor.nonIdAuthorHwang, Junghyeon-
dc.contributor.nonIdAuthorKim, Minki-
dc.contributor.nonIdAuthorJeong, Yeongseok-
dc.contributor.nonIdAuthorJung, Seong-Ook-
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