Improved field effect mobility and stability of indium-free oxide thin film transistor by metal capping layer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Ji-Min | ko |
| dc.contributor.author | Nahm, Ho-Hyun | ko |
| dc.contributor.author | Kim, Hyun-Suk | ko |
| dc.date.accessioned | 2023-08-25T03:00:24Z | - |
| dc.date.available | 2023-08-25T03:00:24Z | - |
| dc.date.created | 2023-07-06 | - |
| dc.date.issued | 2019-11 | - |
| dc.identifier.citation | 26th International Display Workshops, IDW 2019, pp.563 - 566 | - |
| dc.identifier.issn | 1883-2490 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/311815 | - |
| dc.description.abstract | In this work, to get better electrical properties, metal capping layer and lift-off lithography process of a new type of Indium-free amorphous thin films and associated thin-film transistors (TFTs) were investigated. As a result, optimized TFTs showed high mobility (>30cm2/Vs) and excellent stability than conventional InZnO TFTs. | - |
| dc.language | English | - |
| dc.publisher | International Display Workshops | - |
| dc.title | Improved field effect mobility and stability of indium-free oxide thin film transistor by metal capping layer | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-85105350339 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 563 | - |
| dc.citation.endingpage | 566 | - |
| dc.citation.publicationname | 26th International Display Workshops, IDW 2019 | - |
| dc.identifier.conferencecountry | JA | - |
| dc.identifier.conferencelocation | Sapporo | - |
| dc.contributor.localauthor | Nahm, Ho-Hyun | - |
| dc.contributor.nonIdAuthor | Park, Ji-Min | - |
| dc.contributor.nonIdAuthor | Kim, Hyun-Suk | - |
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