DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kuk, Song-Hyeon | ko |
dc.contributor.author | Han, Seung-Min | ko |
dc.contributor.author | Kim, Bong Ho | ko |
dc.contributor.author | Kim, Joon Pyo | ko |
dc.contributor.author | Kim, Seong-Kwang | ko |
dc.contributor.author | Ahn, Seung-Yeop | ko |
dc.contributor.author | Park, Min Hyuk | ko |
dc.contributor.author | Han, Jae-Hoon | ko |
dc.contributor.author | Kim, Sang-Hyeon | ko |
dc.date.accessioned | 2023-08-24T03:00:52Z | - |
dc.date.available | 2023-08-24T03:00:52Z | - |
dc.date.created | 2023-07-13 | - |
dc.date.issued | 2023-08 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.8, pp.4122 - 4127 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/311775 | - |
dc.description.abstract | HfZrOx-based Si n-/p-type ferroelectric fieldeffect transistors (n/pFEFETs) were investigated from 300 to 82 K with pulse measurements, which disclosed device physics at low temperatures. Moreover, FEFET shows extremely improved performance (read-after-write latency <100 ns and write endurance >10(10 )cycles with no device degradation) at 82 K. Even the lower write voltage is feasible at 82 K than at 300 K although the coercive field increases. The enhancement is attributed to frozen trap sites and increased coercive field at 82 K. Our work not only shows a deep understanding of device physics but also proposes that FEFET could be a promising cold memory. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Examination of Ferroelectric FET for "Cold" Nonvolatile Memory | - |
dc.type | Article | - |
dc.identifier.wosid | 001012260500001 | - |
dc.identifier.scopusid | 2-s2.0-85162690642 | - |
dc.type.rims | ART | - |
dc.citation.volume | 70 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 4122 | - |
dc.citation.endingpage | 4127 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2023.3278611 | - |
dc.contributor.localauthor | Kim, Sang-Hyeon | - |
dc.contributor.nonIdAuthor | Han, Seung-Min | - |
dc.contributor.nonIdAuthor | Park, Min Hyuk | - |
dc.contributor.nonIdAuthor | Han, Jae-Hoon | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Charge trapping | - |
dc.subject.keywordAuthor | ferroelectric memory | - |
dc.subject.keywordAuthor | ferroelectric transistor | - |
dc.subject.keywordAuthor | hafnium zirconium oxide | - |
dc.subject.keywordAuthor | low temperature | - |
dc.subject.keywordPlus | HF0.5ZR0.5O2 | - |
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