DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Chunghun | ko |
dc.contributor.author | Kim, Jeong-Gil | ko |
dc.contributor.author | Kim, Nam Dong | ko |
dc.contributor.author | Kim, Myung Jong | ko |
dc.date.accessioned | 2023-08-08T03:00:08Z | - |
dc.date.available | 2023-08-08T03:00:08Z | - |
dc.date.created | 2023-08-07 | - |
dc.date.issued | 2023-11 | - |
dc.identifier.citation | APPLIED SURFACE SCIENCE, v.637 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | http://hdl.handle.net/10203/311234 | - |
dc.description.abstract | The physicochemical properties of graphene, such as the bandgap and electrical conductivity, can be tuned when the carbon atoms are replaced with other heteroatoms. In addition to nitrogen, boron is a dopant that can compensate for the properties lacking in graphene; however, boron-doped graphene has not received significant attention owing to its low doping rate. In this study, we report an improvement in the doping efficiency of arc graphene by utilizing a boron precursor and graphene oxide as anode carbon fillers. X-ray photoelectron spec-troscopy revealed that the doping level of the synthesized graphene flakes (5.7at.%) was significantly higher than that of boron-doped arc graphene reported in the literature (3at.%). Cyclic voltammetry, electrochemical impedance spectroscopy, and constant-current charge/discharge experiments were performed to investigate the electrochemical properties of boron-doped graphene. The synthesized boron-doped graphene exhibited an areal capacitance of 66 & mu;F cm  2, which is superior to that of other doped carbon materials. The electrochemical ac-tivity of boron-doped graphene is affected more by functionalized doping than by substitutional doping, because of the improved wettability displayed by the former. Boron-doped graphene flakes required for various appli-cations can be easily obtained by arc discharge synthesis. | - |
dc.language | English | - |
dc.publisher | ELSEVIER | - |
dc.title | Arc discharge synthesis of graphene with enhanced boron doping concentration for electrochemical applications | - |
dc.type | Article | - |
dc.identifier.wosid | 001031684000001 | - |
dc.identifier.scopusid | 2-s2.0-85163805855 | - |
dc.type.rims | ART | - |
dc.citation.volume | 637 | - |
dc.citation.publicationname | APPLIED SURFACE SCIENCE | - |
dc.identifier.doi | 10.1016/j.apsusc.2023.157825 | - |
dc.contributor.localauthor | Kim, Jeong-Gil | - |
dc.contributor.nonIdAuthor | Kim, Chunghun | - |
dc.contributor.nonIdAuthor | Kim, Nam Dong | - |
dc.contributor.nonIdAuthor | Kim, Myung Jong | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Arc discharge | - |
dc.subject.keywordAuthor | Area normalized capacitance | - |
dc.subject.keywordAuthor | Electrical double layer capacitor | - |
dc.subject.keywordAuthor | Boron-doped graphene | - |
dc.subject.keywordPlus | NITROGEN-DOPED GRAPHENE | - |
dc.subject.keywordPlus | HIGH-SURFACE-AREA | - |
dc.subject.keywordPlus | RAMAN-SPECTROSCOPY | - |
dc.subject.keywordPlus | POROUS CARBON | - |
dc.subject.keywordPlus | CRUMPLED GRAPHENE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordPlus | FUNCTIONALIZATION | - |
dc.subject.keywordPlus | ELECTROCATALYST | - |
dc.subject.keywordPlus | SUPERCAPACITORS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.