DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, Jiman | ko |
dc.contributor.author | Wang, Dong-Hyun | ko |
dc.contributor.author | Han, Joon-Kyu | ko |
dc.contributor.author | Yun, Seong-Yun | ko |
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2023-07-30T08:00:18Z | - |
dc.date.available | 2023-07-30T08:00:18Z | - |
dc.date.created | 2023-05-31 | - |
dc.date.created | 2023-05-31 | - |
dc.date.issued | 2023-07 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.44, no.7, pp.1032 - 1035 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/310955 | - |
dc.description.abstract | The Schottky barrier height (Φ B ) is lowered by high-pressure deuterium annealing (HPDA), in a vertical pillar (VP) metal-oxide-semiconductor field effect transistor (MOSFET). Typical device characteristics were comparatively studied before and after HPDA. A change of contact resistance ( R C ) at a Schottky junction was also analyzed by using a transmission line method (TLM). Moreover, HPDA effects on the R C were characterized on different crystal orientations of silicon, which has a different number of traps. HPDA is more effective to lower the Φ B at (111) orientation than at (100) orientation because a greater number of interface traps can be passivated for an orientation with a high Miller index. Finally, a deuterium peak was physically profiled across the Schottky junction by use of time-of-flight secondary ion mass spectrometry (ToF-SIMS). | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Lowering of Schottky Barrier Height in a MOSFET by Deuterium Annealing | - |
dc.type | Article | - |
dc.identifier.wosid | 001021302800001 | - |
dc.identifier.scopusid | 2-s2.0-85161524485 | - |
dc.type.rims | ART | - |
dc.citation.volume | 44 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 1032 | - |
dc.citation.endingpage | 1035 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2023.3281856 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Wang, Dong-Hyun | - |
dc.contributor.nonIdAuthor | Park, Jun-Young | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | ~Contact resistance | - |
dc.subject.keywordAuthor | high-pressure deu-terium annealing | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | Schottky barrier height | - |
dc.subject.keywordAuthor | Schot-tky contact | - |
dc.subject.keywordAuthor | transmission line method (TLM) | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.