DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, Jong Beom | ko |
dc.contributor.author | Lee, Seung-Hee | ko |
dc.contributor.author | Lee, Tae-Ik | ko |
dc.contributor.author | Kim, Taek-Soo | ko |
dc.contributor.author | Kim, Hyeok | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.date.accessioned | 2023-07-25T11:00:31Z | - |
dc.date.available | 2023-07-25T11:00:31Z | - |
dc.date.created | 2023-07-07 | - |
dc.date.issued | 2018-12 | - |
dc.identifier.citation | 25th International Display Workshops, IDW 2018, pp.1536 - 1538 | - |
dc.identifier.issn | 1883-2490 | - |
dc.identifier.uri | http://hdl.handle.net/10203/310803 | - |
dc.description.abstract | For the flexible transparent display driving device, we realize the flexible oxide TFT with high process temperature up to 300°C by using inorganic exfoliation layer. The low adhesive energy between oxide TFT and exfoliation layer was measured, and the device shows reasonable electrical characteristics. | - |
dc.language | English | - |
dc.publisher | International Display Workshops | - |
dc.title | Flexible oxide thin-film transistor with high process temperature by means of peel-off and transfer method | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-85072128465 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 1536 | - |
dc.citation.endingpage | 1538 | - |
dc.citation.publicationname | 25th International Display Workshops, IDW 2018 | - |
dc.identifier.conferencecountry | JA | - |
dc.identifier.conferencelocation | Nagoya | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Lee, Seung-Hee | - |
dc.contributor.nonIdAuthor | Lee, Tae-Ik | - |
dc.contributor.nonIdAuthor | Kim, Taek-Soo | - |
dc.contributor.nonIdAuthor | Kim, Hyeok | - |
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