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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Effect of channel defining layer on the vertical oxide TFTs for the application to the ultra high resolution display

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dc.contributor.authorLee, Seung-Heeko
dc.contributor.authorLee, Kwang Heumko
dc.contributor.authorNam, Yunyongko
dc.contributor.authorKo, Jong-Beomko
dc.contributor.authorYeom, Hye-Inko
dc.contributor.authorHwang, Chi-Sunko
dc.contributor.authorPark, Sang-Hee Koko
dc.date.accessioned2023-07-24T01:00:30Z-
dc.date.available2023-07-24T01:00:30Z-
dc.date.created2023-07-07-
dc.date.issued2017-05-
dc.identifier.citationSID Symposium, Seminar, and Exhibition 2017, Display Week 2017, pp.389 - 392-
dc.identifier.issn0097-966X-
dc.identifier.urihttp://hdl.handle.net/10203/310766-
dc.description.abstractWe investigated the effect of back channel material which plays as a channel defining layer in vertical TFT for the application to the TFT of ultra-high resolution display. Although the IGZO vertical TFT with polyimide back channel has low mobility, it shows good on/off ratio higher than 107, low gate leakage current, and hard saturation behavior with channel length of 1 um.-
dc.languageEnglish-
dc.publisherBlackwell Publishing Ltd-
dc.titleEffect of channel defining layer on the vertical oxide TFTs for the application to the ultra high resolution display-
dc.typeConference-
dc.identifier.scopusid2-s2.0-85044469270-
dc.type.rimsCONF-
dc.citation.beginningpage389-
dc.citation.endingpage392-
dc.citation.publicationnameSID Symposium, Seminar, and Exhibition 2017, Display Week 2017-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationLos Angeles-
dc.identifier.doi10.1002/sdtp.11642-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorLee, Seung-Hee-
dc.contributor.nonIdAuthorNam, Yunyong-
dc.contributor.nonIdAuthorKo, Jong-Beom-
dc.contributor.nonIdAuthorYeom, Hye-In-
dc.contributor.nonIdAuthorHwang, Chi-Sun-
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MS-Conference Papers(학술회의논문)
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