DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Choi, Shinhyun | - |
dc.contributor.advisor | 최신현 | - |
dc.contributor.author | Kim, Beomjin | - |
dc.date.accessioned | 2023-06-26T19:31:02Z | - |
dc.date.available | 2023-06-26T19:31:02Z | - |
dc.date.issued | 2021 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=1007052&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/309457 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2021.8,[iii, 30 p. :] | - |
dc.description.abstract | In the advent of the Big Data era and the arising of the artificial intelligence technology, the availability to handle the huge data is highly required. However, the conventional von Neumann architecture, which consists of physically separated memory and processing unit, triggers bottleneck to deal with data-intensive task due to obligated data transfer. Neuromorphic computing is one of the promising alternative, which considered to overcome the bottleneck with synapse device, where the data can be computed and processed in the same place. Among them, The 3-terminal synapse device is attractive due to its high stability and weight controllability. However, previous researches have reported several drawbacks such as high nonlinearity, CMOS incompatibility, and low dynamic range. In this work, the field-effect based 3-terminal device is introduced, utilizing the thermionic emission based charge injection from and to gate. The device achieves high linearity, uniformity, low power consumption, and reasonable endurance and retention with CMOS compatible material and process, which implies the device is qualified for large-scale crossbar array based neuromorphic computing. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Synapse device▼aNeuromorphic computing▼aLinearity▼aCMOS compatible▼aLow power consumption | - |
dc.subject | 시냅스 소자▼a뉴로모픽 컴퓨팅▼a선형성▼aCMOS 호환성▼a저전력동작 | - |
dc.title | Development of 3-terminal synaptic transistor based on charge injection for linear conductance update | - |
dc.title.alternative | 선형성 향상을 위한 게이트 전하 주입 기반 3단자 시냅스 소자 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :전기및전자공학부, | - |
dc.contributor.alternativeauthor | 김범진 | - |
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