Theoretical and experimental demonstration of high-performance near-infrared thin-film Schottky barrier photodetectors고성능 적외선 초박막 쇼트키 광 검출기의 이론적 연구 및 실험적 구현

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dc.contributor.advisorYu, Kyoungsik-
dc.contributor.advisor유경식-
dc.contributor.authorJin, Yeonghoon-
dc.date.accessioned2023-06-23T19:33:57Z-
dc.date.available2023-06-23T19:33:57Z-
dc.date.issued2023-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=1030569&flag=dissertationen_US
dc.identifier.urihttp://hdl.handle.net/10203/309145-
dc.description학위논문(박사) - 한국과학기술원 : 전기및전자공학부, 2023.2,[viii, 83 p. :]-
dc.description.abstractHot carrier harvesting with a metal-semiconductor Schottky junction, often called as internal photoemission (IPE), has been a promising candidate for semiconductor-based sub-bandgap photodetection in the near-infrared wavelengths for many emerging applications such as imaging, sensing, and photocatalysis. However, there is a distinct limitation that the external quantum efficiency (EQE) of IPE is very low. To overcome this problem, numerous studies have been focused on plasmonic effects to enhance optical absorption in the vicinity of metal/semiconductor interfaces. Despite these efforts, the limitation has not been fully addressed by only improving optical absorption without a complete understanding of the IPE system. Accordingly, comprehensive understanding and quantitative analysis of its complex dynamics are necessary. In this dissertation, we demonstrate a rigorous theoretical model for a simple one-dimensional IPE system that can describe the dynamics of the IPE system and provide quantitative loss mechanism analysis, and we experimentally verify our model using planar thin-film Schottky barrier photodetectors (SBPDs). Our model shows that optical absorption is responsible for only a part of the entire IPE process and other transport mechanisms should be carefully considered in a wholistic manner, indicating the importance of quantitative loss mechanism analysis. Guided by the model, our patternless silicon-based thin-film SBPDs achieve EQEs higher than previously reported nano-patterned SBPDs.-
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectSchottky barrier photodetectors▼aSub-bandgap photodetection▼aInternal photoemission▼aLoss mechanism▼aThin-film-
dc.subject쇼트키 광 검출기▼a서브 밴드갭▼a손실 메커니즘▼a초박막-
dc.titleTheoretical and experimental demonstration of high-performance near-infrared thin-film Schottky barrier photodetectors-
dc.title.alternative고성능 적외선 초박막 쇼트키 광 검출기의 이론적 연구 및 실험적 구현-
dc.typeThesis(Ph.D)-
dc.identifier.CNRN325007-
dc.description.department한국과학기술원 :전기및전자공학부,-
dc.contributor.alternativeauthor진영훈-
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